PBSS2515YPN,115 NXP Semiconductors, PBSS2515YPN,115 Datasheet
PBSS2515YPN,115
Specifications of PBSS2515YPN,115
PBSS2515YPN T/R
PBSS2515YPN T/R
Related parts for PBSS2515YPN,115
PBSS2515YPN,115 Summary of contents
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DATA SHEET dbook, halfpage PBSS2515YPN 15 V low V transistor Product data sheet Supersedes data of 2002 May 08 DISCRETE SEMICONDUCTORS MBD128 NPN/PNP CE(sat) 2005 Jan 11 ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat) FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low V same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATION • General purpose switching and muting • ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC) ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat) CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat) 600 handbook, halfpage ( 400 (2) 200 (3) 0 − TR1 (NPN 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values handbook, halfpage V CEsat (mV (1) (2) 10 ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat handbook, halfpage R CEsat (Ω) 10 (1) (2) (3) 1 −1 10 − TR1 (NPN 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 Equivalent on-resistance as a function of collector current; typical values. 2005 Jan 11 MLD692 1200 ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat) 600 handbook, halfpage h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 = −2 V. TR2 (PNP 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.8 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat handbook, halfpage R CEsat (Ω −1 10 −1 −10 −1 −10 TR2 (PNP 20 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.12 Equivalent on-resistance as a function of collector current; typical values. 2005 Jan 11 MLD698 − ...
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... NXP Semiconductors 15 V low V NPN/PNP transistor CE(sat) PACKAGE OUTLINE Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2005 Jan scale 2.2 1.35 2.2 1.3 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...