PBSS2515VS,115 NXP Semiconductors, PBSS2515VS,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS2515VS,115
• Description: TRANS NPN 15V 1000MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 420MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934056768115; PBSS2515VS T/R; PBSS2515VS T/R

Philips Semiconductors
2004 Dec 23
handbook, halfpage
handbook, halfpage
15 V low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
B
600
400
200
= 2 V.
10
10
= 20.
10
amb
amb
amb
amb
amb
amb
0
10
10
1
3
2
= 150 C.
= 25 C.
= 55 C.
= 150 C.
= 25 C.
= 55 C.
1
1
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
CE(sat)
1
1
(1)
(2)
(3)
(2)
NPN double transistor
10
10
(1)
(3)
10
10
2
2
I C (mA)
I C (mA)
MLD643
MLD647
10
10
3
3
5
handbook, halfpage
handbook, halfpage
V BEsat
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
(mV)
CE
(mV)
V BE
/I
1200
1000
1200
1000
B
800
600
400
200
800
600
400
200
= 2 V.
= 20.
amb
amb
amb
amb
amb
amb
10
10
= 55 C.
= 25 C.
= 150 C.
= 150 C.
= 25 C.
= 55 C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
1
1
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
PBSS2515VS
Product specification
10
10
2
2
I C (mA)
I C (mA)
MLD645
MLD646
10
10
3
3