BCV65,215 NXP Semiconductors, BCV65,215 Datasheet - Page 5

• Manufacturer Part Number: BCV65,215
• Description: TRANS NPN/PNP 30V 100MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV65,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 2mA, 5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 75 at 2 mA at 5 V
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Base Common Emitter
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933831500215; BCV65 T/R; BCV65 T/R

NXP Semiconductors
BCV65
Product data sheet
Fig 5.
Fig 7.
V
(mV)
h
CEsat
1000
FE
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−10
−10
800
600
400
200
−10
−10
−10
0
4
3
2
V
TR2 (PNP): DC current gain as a function of
collector current; typical values
I
TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
C
−1
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
= −5 V
= 20
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−10
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
All information provided in this document is subject to legal disclaimers.
I
C
2
I
C
(mA)
mgt715
mgt717
(mA)
−10
−10
Rev. 4 — 27 July 2010
3
3
Fig 6.
Fig 8.
V
(mV)
V
(mV)
BEsat
BE
−1000
−1200
−1200
−1000
−800
−600
−400
−200
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−800
−600
−400
−200
−10
−10
0
0
V
TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
I
TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
C
−2
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= −5 V
= 20
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
−10
NPN/PNP general-purpose transistor
−1
−1
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
−10
−10
© NXP B.V. 2010. All rights reserved.
2
I
C
2
I
C
(mA)
BCV65
mgt716
(mA)
mgt718
−10
−10
3
3
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