BCM847BV,115 NXP Semiconductors, BCM847BV,115 Datasheet - Page 7

• Manufacturer Part Number: BCM847BV,115
• Description: TRANS NPN/NPN 45V 100MA SS-MINI
• Manufacturer: NXP Semiconductors

Specifications of BCM847BV,115

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059429115; BCM847BV T/R; BCM847BV T/R

NXP Semiconductors
BCM847BV_BS_DS_6
Product data sheet
Fig 5.
Fig 7.
V
(pF)
(V)
C
BE
c
0.8
0.6
0.4
1
5
4
3
2
1
0
10
0
V
Base-emitter voltage as a function of collector
current; typical values
f = 1 MHz; T
Collector capacitance as a function of
collector-base voltage; typical values
CE
1
= 5 V; T
2
1
amb
amb
= 25 C
= 25 C
4
10
6
10
2
8
I
006aaa536
006aaa538
C
V
(mA)
CB
(V)
10
Rev. 06 — 28 August 2009
10
3
Fig 6.
Fig 8.
(MHz)
(pF)
C
f
T
10
10
e
10
15
13
11
9
7
5
3
2
1
V
Transition frequency as a function of collector
current; typical values
0
f = 1 MHz; T
Emitter capacitance as a function of
emitter-base voltage; typical values
CE
= 5 V; T
NPN/NPN matched double transistors
BCM847BV/BS/DS
amb
amb
2
= 25 C
= 25 C
10
4
I
C
(mA)
V
© NXP B.V. 2009. All rights reserved.
EB
006aaa537
006aaa539
(V)
10
6
2
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