FMY4AT148 Rohm Semiconductor, FMY4AT148 Datasheet - Page 3

• Manufacturer Part Number: FMY4AT148
• Description: TRANS NPN/PNP 50V 150MA SMT5 TR
• Manufacturer: Rohm Semiconductor

Specifications of FMY4AT148

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-5, SOT-753
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistors
NPN Tr
Fig.10 Grounded emitter propagation
−0.05
500
200
100
Fig.7 Collector-emitter saturation
−0.5
−0.2
−0.1
0.5
0.2
0.1
50
50
20
10
−0.2 −0.5 −1 −2
−1
5
2
1
−0.2 −0.5 −1
Fig.4 DC current gain vs.
0
Ta=25˚C
BASE TO EMITTER VOLTAGE : V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
voltage vs. collector current (II)
COLLECTOR CURRENT : I
characteristics
COLLECTOR CURRENT : I
collector current (Ι)
Ta=100˚C
−40˚C
−2
25˚C
V
−5 −10 −20
CE
−5 −10 −20
= −5V
−3V
−1V
C
C
V
(
(
mA)
l
mA)
CE
C
/l
−50 −100
=6V
BE
−50 −100
B
=10
(V)
1000
500
200
100
50
500
200
100
COLLECTOR TO EMITTER VOLTAGE : V
0.5
50
Fig.8 Gain bandwidth product vs.
100
−0.2 −0.5 −1 −2
80
60
40
20
Fig.11 Grounded emitter output
0
0
Ta=25°C
Fig.5 DC current gain vs.
1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
emitter current
0.4
2
characteristics ( Ι )
collector current (ΙΙ)
Ta=100˚C
−40˚C
5
0.8
25˚C
−5 −10 −20
10
1.2
20
E
(
Ta=25˚C
V
mA)
CE
C
V
(
= − 12V
1.6
mA)
CE
50
= −6V
0.50mA
−50 −100
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
=0A
100
CE
(V)
2.0
−0.05
−0.5
−0.2
−0.1
Fig.6 Collector-emitter saturation
COLLECTOR TO EMITTER VOLTAGE : V
−1
Fig.9 Collector output capacitance vs.
−0.2 −0.5 −1
20
10
10
5
2
8
6
4
2
0
0
Fig.12
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Ta=25°C
−0.5
COLLECTOR CURRENT : I
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
voltage vs. collector current (Ι)
4
−1
Grounded emitter output
characteristics ( ΙΙ )
I
C
/I
−2
B
= 50
−2
Rev.A
20
10
8
−5 −10 −20
30µA
27µA
24µA
21µA
18µA
15µA
12µA
I
B
9µA
6µA
3µA
=0A
−5
12
FMY4A
−10
C
Ta=25˚C
(
Ta=25˚C
f=1MHz
I
I
EB
16
mA)
E
C
= 0A
= 0A
−50 −100
(V)
−20
CB
CE
(V)
3/4
(V)
20