FMY4AT148 Rohm Semiconductor, FMY4AT148 Datasheet

TRANS NPN/PNP 50V 150MA SMT5 TR

FMY4AT148

Manufacturer Part Number
FMY4AT148
Description
TRANS NPN/PNP 50V 150MA SMT5 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of FMY4AT148

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
180MHz, 140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-5, SOT-753
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMY4AT148
Quantity:
60 000
Part Number:
FMY4AT148
Manufacturer:
ROHM
Quantity:
3 200
Transistors
Power management (dual transistors)
FMY4A
1) Both a 2SA1037AK chip and 2SC2412K chip in a
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Feature
Equivalent circuits
Absolute maximum ratings (Ta = 25°C)
Package, marking, and packaging specifications
Basic ordering unit (pieces)
1 200mW per element must not be exceeded.
EMT or UMT or SMT package.
(2)
FMY4A
(3)
Tr
2
Marking
Package
Part No.
Code
(4)
Parameter
Tr
1
(5)
(1)
FMY4A
SMT5
T148
3000
Y4
Symbol
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
C
C
−150
−60
−50
300 (TOTAL)
−6
−55 to +150
Tr
1
Limits
150
150
60
50
Tr
7
2
Unit
mW
mA
°C
°C
V
V
V
External dimensions (Unit : mm)
FMY4A
ROHM : SMT5
EIAJ : SC-74A
1
0.3to0.6
1.6
2.8
Each lead has same dimensions
Rev.A
FMY4A
1/4

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FMY4AT148 Summary of contents

Page 1

Transistors Power management (dual transistors) FMY4A Feature 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. Equivalent circuits FMY4A (3) (4) ( (2) (1) Absolute maximum ratings (Ta = ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Tr (PNP) 1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗ Transition frequency of the device. ...

Page 3

Transistors 500 = −5V V Ta=25˚C CE −3V −1V 200 100 50 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 mA) COLLECTOR CURRENT : Fig.4 DC current gain vs. collector current (Ι) − =10 ...

Page 4

Transistors 500 Ta=25°C V =5V 200 100 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.13 DC current gain vs. collector current ( Ι ) 0.5 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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