UMZ7NTR Rohm Semiconductor, UMZ7NTR Datasheet - Page 3

• Manufacturer Part Number: UMZ7NTR
• Description: TRANS NPN/PNP 12V 500MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMZ7NTR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 200mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 10mA, 2V
• Power - Max: 150mW
• Frequency - Transition: 320MHz, 260MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistors
Tr
Electrical characteristic curves
1000
1
500
200
100
1000
(NPN)
50
20
10
500
200
100
5
2
1
50
20
10
Fig.4 Collector-emitter saturation voltage
1000
5
2
1
0
500
200
100
Fig.1 Grounded emitter propagation
1
50
20
10
I
0.1
5
2
1
C
Fig.7 Collector output capacitance
BASE TO EMITTER VOLTAGE : V
/I
2
B
vs. collector current ( ΙΙ )
=
0.2
COLLECTOR CURRENT : I
EMITTER TO BASE VOLTAGE : V
10
characteristics
50
20
Emitter input capacitance
5 10 20
0.5 1
0.5
vs collector-base voltage
vs emitter-base voltage
2
50 100 200 5001000
1.0
5 10 20
Cib
Cob
C
Ta=25°C
(mA)
V
CE
I
f
Ta
BE
E=
=
=2V
1MHz
(V)
=
0A
EB
25°C
50 100
1.5
(V)
1000
500
200
100
10000
50
20
10
5000
2000
1000
5
2
1
500
200
100
1
50
20
10
1
Fig.5 Base-emitter saturation voltage
Fig.2 DC current gain vs.
2
COLLECTOR CURRENT : I
2
COLLECTOR CURRENT : I
vs. collector current
5 10 20
collector current
5 10 20
Ta=125°C
Ta=−40°C
−40°C
25°C
125°C
25°C
50 100 200 500
50 100 200 5001000
C
C
(mA)
V
I
C
(mA)
CE
/I
=2V
B
=20
1000
Fig.6 Collector output capacitance
1000
500
200
100
1000
50
20
10
Fig.3 Collector-emitter saturation voltage
500
200
100
5
2
1
50
20
10
1
5
2
1
1
COLLECTOR TO BASE VOLTAGE : V
Emitter input capacitance
V
Ta
Pulsed
2
vs. collector current ( Ι )
CE=
2
COLLECTOR CURRENT : I
=
Ta=125°C
25˚C
2V
5 10 20
−40°C
5 10 20
25°C
EMZ7 / UMZ7N
Rev.A
50 100 200 5001000
50 100 200 5001000
vs. base voltage
C
(mA)
I
C
/I
B
CB
=20
(V)
3/4