UMZ7NTR Rohm Semiconductor, UMZ7NTR Datasheet

TRANS NPN/PNP 12V 500MA SOT-363

UMZ7NTR

Manufacturer Part Number
UMZ7NTR
Description
TRANS NPN/PNP 12V 500MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMZ7NTR

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 10mA, 2V
Power - Max
150mW
Frequency - Transition
320MHz, 260MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMZ7NTR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose transistor
(dual transistors)
EMZ7/UMZ7N
1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
2) Mounting possible with EMT3 or UMT3 automatic
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
5) Low V
NPN / PNP epitaxial planar silicon transistor
1 120mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Features
Structure
interference.
Absolute maximum ratings (Ta=25 C)
Equivalent Circuit
UMT package.
mounting machines.
EMZ7 / UMZ7N
Tr
2
(3)
(4)
CE(sat)
Parameter
(2)
(5)
Tr
(1)
(6)
1
Symbol
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
C
500
Tr
15
12
6
1
150(TOTAL)
−55 to +150
1
Limits
150
−500
−15
−12
Tr
−6
−1
2
External dimensions (Unit : mm)
Abbreviated symbol
EMZ7
Each lead has same dimensions
ROHM : EMT6
( 4 )
( 5 )
( 6 )
Unit
mW
mA
°C
°C
V
V
V
A
1.2
1.6
( 3 )
( 2 )
( 1 )
1
: Z7
EMZ7 / UMZ7N
UMZ7N
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Rev.A
Abbreviated symbol
1.25
2.1
Each lead has same dimensions
: Z7
1/4

Related parts for UMZ7NTR

UMZ7NTR Summary of contents

Page 1

Transistors General purpose transistor (dual transistors) EMZ7/UMZ7N Features 1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) ...

Page 2

Transistors Electrical characteristics (Ta= (NPN) 1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Tr (PNP) 2 Parameter Collector-base ...

Page 3

Transistors Electrical characteristic curves Tr (NPN) 1 1000 V =2V CE 500 200 100 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : V (V) BE Fig.1 Grounded emitter propagation characteristics 1000 Ta=25°C 500 ...

Page 4

Transistors Tr (PNP) 2 1000 = 500 200 100 0.5 1.0 (V) BASE TO EMITTER VOLTAGE : V BE Fig.8 Grounded emitter propagation characteristics 1000 Ta=25°C 500 200 100 50 =50 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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