BCM857BS,135 NXP Semiconductors, BCM857BS,135 Datasheet - Page 7

TRANS PNP/PNP 45V 100MA SC88

BCM857BS,135

Manufacturer Part Number
BCM857BS,135
Description
TRANS PNP/PNP 45V 100MA SC88
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BCM857BS,135

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
300mW
Frequency - Transition
175MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
200
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 45 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
175 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058729135
BCM857BS /T3
BCM857BS /T3
NXP Semiconductors
BCM857BV_BS_DS_6
Product data sheet
Fig 5.
Fig 7.
V
(pF)
(V)
C
BE
c
0.8
0.6
0.4
1
8
6
4
2
0
10
0
V
Base-emitter voltage as a function of collector
current; typical values
f = 1 MHz; T
Collector capacitance as a function of
collector-base voltage; typical values
CE
1
= 5 V; T
2
1
amb
amb
= 25 C
= 25 C
4
10
6
10
2
8
I
006aaa544
006aaa546
C
V
(mA)
CB
(V)
Rev. 06 — 28 August 2009
10
10
3
Fig 6.
Fig 8.
(MHz)
(pF)
C
f
T
10
10
e
10
15
13
11
9
7
5
3
2
V
Transition frequency as a function of collector
current; typical values
0
f = 1 MHz; T
Emitter capacitance as a function of
emitter-base voltage; typical values
1
CE
= 5 V; T
PNP/PNP matched double transistors
BCM857BV/BS/DS
amb
amb
2
= 25 C
= 25 C
10
4
I
C
(mA)
V
© NXP B.V. 2009. All rights reserved.
EB
006aaa545
006aaa547
(V)
10
6
2
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