PEMZ1,115 NXP Semiconductors, PEMZ1,115 Datasheet - Page 3

• Manufacturer Part Number: PEMZ1,115
• Description: TRANS NPN/PNP 40V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMZ1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056705115; PEMZ1 T/R; PEMZ1 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 07
R
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
f
C
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
NPN/PNP general purpose transistors
th j-a
c
= 25 °C; unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
collector capacitance
TR1 (NPN)
TR2 (PNP)
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
V
V
V
V
I
I
I
C
C
E
CB
CB
EB
CE
= 50 mA; I
= 2 mA; V
= i
= 4 V; I
= 30 V; I
= 30 V; I
= 6 V; I
e
= 0; V
3
CONDITIONS
C
C
notes 1 and 2
CE
CB
B
E
E
= 0
= 1 mA
= 5.0 mA; note 1
= 0
= 0; T
= 12 V; f = 1 MHz
= 12 V; f = 100 MHz 100
CONDITIONS
j
= 150 °C
−
−
−
120
−
−
−
MIN.
VALUE
416
−
−
−
−
−
−
−
−
TYP.
Product data sheet
100
10
100
−
200
−
1.5
2.2
MAX.
PEMZ1
UNIT
K/W
nA
μA
nA
mV
MHz
pF
pF
UNIT