BC847DS,115 NXP Semiconductors, BC847DS,115 Datasheet - Page 4

• Manufacturer Part Number: BC847DS,115
• Description: TRANS NPN/NPN GP 45V 6TSOP
• Manufacturer: NXP Semiconductors

Specifications of BC847DS,115

• Package / Case: SC-74-6
• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063469115

NXP Semiconductors
7. Characteristics
BC847DS_1
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
5
0.50
0.20
0.05
0.01
= 1
0
0.75
0.33
0.10
0.02
10
4
Table 7.
T
Symbol Parameter
Per transistor
I
I
h
V
V
V
CBO
EBO
amb
FE
CEsat
BEsat
BE
= 25 C unless otherwise specified.
10
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage V
Characteristics
3
10
Rev. 01 — 25 August 2009
2
Conditions
V
V
T
V
V
I
I
I
I
C
C
C
C
CB
CB
j
EB
CE
CE
10
I
I
I
I
= 150 C
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
C
C
C
C
= 6 V; I
= 30 V; I
= 30 V; I
= 5 V
= 5 V
= 10 A
= 2 mA
= 2 mA
= 10 mA
1
45 V, 100 mA NPN/NPN general-purpose transistor
C
B
B
E
E
= 0 A
B
B
= 0.5 mA
= 0.5 mA
= 0 A
= 0 A;
= 5 mA
= 5 mA
1
10
Min
-
-
-
-
200
-
-
-
-
580
-
Typ
-
-
-
280
300
55
200
755
1000
650
-
10
2
BC847DS
© NXP B.V. 2009. All rights reserved.
t
p
006aab622
(s)
Max
15
5
100
-
450
100
300
850
-
700
770
10
3
Unit
nA
nA
mV
mV
mV
mV
mV
mV
A
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