PUMZ2,115 NXP Semiconductors, PUMZ2,115 Datasheet - Page 4

• Manufacturer Part Number: PUMZ2,115
• Description: TRANS NPN/PNP 50V 150MA SOT457
• Manufacturer: NXP Semiconductors

Specifications of PUMZ2,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz, 190MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz at NPN, 190 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058172115; PUMZ2 T/R; PUMZ2 T/R

NXP Semiconductors
7. Characteristics
Table 8.
T
PIMZ2_PUMZ2_6
Product data sheet
Symbol Parameter
Per transistor; for the PNP transistor with negative polarity; unless otherwise specified
I
I
h
TR1 (PNP)
V
f
C
TR2 (NPN)
V
f
C
CBO
EBO
T
T
amb
FE
CEsat
CEsat
c
c
= 25
°
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
collector capacitance
collector-emitter saturation
voltage
transition frequency
collector capacitance
C unless otherwise specified.
Characteristics
Conditions
V
V
V
I
I
I
I
I
I
C
E
E
C
E
E
CB
CB
EB
CE
= −2 mA; V
= i
= 2 mA; V
= i
= −50 mA; I
= 50 mA; I
= 60 V; I
= 60 V; I
= 7 V; I
= 6 V; I
e
e
= 0 A; V
= 0 A; V
Rev. 06 — 17 November 2009
C
C
CE
E
E
B
= 0 A
= 1 mA
CE
B
= 0 A
= 0 A; T
CB
= 5 mA
CB
= 12 V; f = 100 MHz
= −5 mA
= −12 V; f = 100 MHz
= −12 V; f = 1 MHz
= 12 V; f = 1 MHz
j
= 150 °C
NPN/PNP general-purpose double transistors
-
100
Min
-
-
-
120
-
-
-
-
PIMZ2; PUMZ2
Typ
-
-
-
250
-
190
2.3
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
100
50
100
560
−500
-
5
250
-
3
Unit
nA
μA
nA
mV
MHz
pF
mV
MHz
pF
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