BC847BS,135 NXP Semiconductors, BC847BS,135 Datasheet - Page 6

• Manufacturer Part Number: BC847BS,135
• Description: TRANS NPN 45V 100MA DUAL SC-88
• Manufacturer: NXP Semiconductors

Specifications of BC847BS,135

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934042520135; BC847BS /T3; BC847BS /T3

NXP Semiconductors
BC847BS_3
Product data sheet
Fig 4.
Fig 6.
(mV)
V
BE
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
1200
1000
FE
600
500
400
300
200
100
800
600
400
200
0
10
0
10
V
Per transistor: DC current gain as a function of
collector current; typical values
V
Per transistor: Base-emitter voltage as a
function of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
2
= 5 V
= 5 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
10
1
1
1
(1)
(2)
(3)
10
(1)
(2)
(3)
10
10
2
10
I
C
I
2
C
(mA)
mgt727
mgt728
(mA)
Rev. 03 — 18 February 2009
10
10
3
3
Fig 5.
Fig 7.
45 V, 100 mA NPN/NPN general-purpose transistor
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
0.20
C
0.15
0.10
0.05
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
T
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
I
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
C
amb
amb
amb
amb
1
/I
B
= 20
= 25 C
= 55 C
= 25 C
= 150 C
1
1
2
(1)
(2)
(3)
10
I
B
(mA) = 4.0
3
3.2
2.4
1.6
0.8
BC847BS
10
© NXP B.V. 2009. All rights reserved.
2
4
I
006aab422
006aab423
C
V
3.6
2.8
2.0
1.2
0.4
CE
(mA)
(V)
10
5
3
6 of 12