PMBT3946YPN,115 NXP Semiconductors, PMBT3946YPN,115 Datasheet
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PMBT3946YPN,115
Specifications of PMBT3946YPN,115
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PMBT3946YPN,115 Summary of contents
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PMBT3946YPN 40 V, 200 mA NPN/PNP general-purpose double transistor Rev. 01 — 12 May 2009 1. Product profile 1.1 General description NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Type number ...
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... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PMBT3946YPN SC-88 4. Marking Table 5. Type number PMBT3946YPN [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor Pinning Description emitter TR1 ...
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... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1 (NPN) V CBO TR2 (PNP) V CBO Per transistor; for the PNP transistor with negative polarity V CEO V EBO tot Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...
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... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint th(j-a) 0.75 (K/W) 0.5 0.33 2 0.2 10 0.1 0.05 0.02 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; ...
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... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol TR1 (NPN) I CBO I EBO CEsat V BEsat off PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor Characteristics Parameter Conditions collector-base cut-off current emitter-base cut-off current DC current gain 0 100 mA C collector-emitter ...
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... NXP Semiconductors Table unless otherwise specified. amb Symbol TR2 (PNP) I CBO I EBO CEsat V BEsat off PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor Characteristics …continued Parameter Conditions collector-base cut-off current emitter-base cut-off current DC current gain 0 100 mA C collector-emitter ...
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... NXP Semiconductors 600 h FE 400 (1) (2) 200 ( ( 150 C amb ( amb ( amb Fig 3. TR1 (NPN): DC current gain as a function of collector current; typical values 1 (V) (1) 0.8 (2) ( amb ( amb ( 150 C amb Fig 5. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values PMBT3946YPN_1 ...
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... NXP Semiconductors (1) T (2) T (3) T Fig 7. PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor 1 V CEsat (V) ( 150 C amb = 25 C amb = 55 C amb TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 12 May 2009 PMBT3946YPN 006aab119 ...
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... NXP Semiconductors 400 h FE (1) 300 200 (2) (3) 100 ( 150 C amb ( amb ( amb Fig 8. TR2 (PNP): DC current gain as a function of collector current; typical values 1 (V) 1.0 (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 150 C amb Fig 10. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values ...
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... NXP Semiconductors (1) T (2) T (3) T Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; 8. Test information Fig 13. TR1 (NPN): Test circuit for switching times PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor 1 V CEsat (V) ( (2) ( 150 C amb = 25 C amb ...
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... NXP Semiconductors Fig 14. TR2 (PNP): Test circuit for switching times 9. Package outline Fig 15. Package outline SOT363 (SC-88) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PMBT3946YPN [1] For further information and the availability of packing methods, see ...
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... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 17. Wave soldering footprint SOT363 (SC-88) PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 01 — 12 May 2009 PMBT3946YPN 0 ...
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... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PMBT3946YPN_1 20090512 PMBT3946YPN_1 Product data sheet 40 V, 200 mA NPN/PNP general-purpose double transistor Data sheet status Change notice Product data sheet - Rev. 01 — 12 May 2009 PMBT3946YPN Supersedes - © NXP B.V. 2009. All rights reserved. ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Revision history ...