BC856BS,115 NXP Semiconductors, BC856BS,115 Datasheet - Page 5

• Manufacturer Part Number: BC856BS,115
• Description: TRANS PNP/PNP 100MA 65V SC88
• Manufacturer: NXP Semiconductors

Specifications of BC856BS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 290
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 65 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063583115

NXP Semiconductors
7. Characteristics
BC856BS_1
Product data sheet
Table 8.
T
Symbol Parameter
Per transistor
I
I
h
V
V
V
C
C
f
NF
CBO
EBO
T
amb
FE
CEsat
BEsat
BE
c
e
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage V
collector capacitance V
emitter capacitance
transition frequency
noise figure
Characteristics
Rev. 01 — 11 August 2009
Conditions
V
V
T
V
V
I
I
I
I
I
I
f = 1 MHz
V
I
V
f = 100 MHz
V
R
f = 10 Hz to 15.7 kHz
V
R
B = 200 Hz
C
B
C
C
B
C
C
j
CB
CB
EB
CE
CE
CB
EB
CE
CE
CE
S
S
I
I
I
I
= 150 C
= 0.5 mA
= 0.5 mA
= 10 mA;
= 100 mA; I
= 10 mA;
= 100 mA; I
= i
C
C
C
C
= 2 k ;
= 2 k ; f = 1 kHz;
= 6 V; I
= 0.5 V;
= 50 V; I
= 30 V; I
= 5 V
= 5 V
= 10 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 A
= 2 mA
= 2 mA
= 10 mA
c
= 0 A; f = 1 MHz
65 V, 100 mA PNP/PNP general-purpose transistor
C
C
C
C
E
E
E
= 0 A
= 0.2 mA;
= 0.2 mA;
= 10 mA;
B
B
= i
= 0 A
= 0 A;
= 5 mA
= 5 mA
e
= 0 A;
Min
-
-
-
-
200
-
-
-
-
-
-
-
100
-
-
600
Typ
-
-
-
270
290
-
2.3
10
-
1.6
2.9
55
200
755
900
650
BC856BS
© NXP B.V. 2009. All rights reserved.
Max
-
450
-
-
-
-
-
-
15
5
100
100
300
850
750
820
Unit
nA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
A
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