MMDT4146-7 Diodes Zetex, MMDT4146-7 Datasheet - Page 4

TRANSISTOR COMP PAIR 40V SOT-363

MMDT4146-7

Manufacturer Part Number
MMDT4146-7
Description
TRANSISTOR COMP PAIR 40V SOT-363
Manufacturer
Diodes Zetex
Datasheet

Specifications of MMDT4146-7

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 1V
Power - Max
200mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
MMDT4146DITR
MMDT4146TR
MMDT4146TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMDT4146-7
Manufacturer:
DODIDES
Quantity:
20 323
Part Number:
MMDT4146-7-F
Manufacturer:
DIODES
Quantity:
5 538
Ordering Information
Marking Information
Notes:
Date Code Key
MMDT4146
Document number: DS30162 Rev. 11 - 2
Month
Code
Code
Year
15
10
0.01
5
0
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
0.1
0.1
Fig. 9 Typical Capacitance Characteristics (NPN-4124)
1
0.1
Fig. 7 Typical Collector-Emitter Saturation Voltage
1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
MMDT4146-7-F
Part Number
J
Jan
1
I , COLLECTOR CURRENT (mA)
vs. Collector Current (NPN-4124)
C
V , REVERSE VOLTAGE (V)
K
R
1
1
Feb
2
L
(Note 7)
10
M
Mar
3
10
N
100
Apr
4
P
K12
100
1,000
R
May
5
www.diodes.com
SOT-363
S
Case
4 of 5
K12 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Jun
6
T
0.1
10
U
1
Jul
7
0.1
Fig. 8 Typical Base-Emitter Saturation Voltage
V
Aug
I , COLLECTOR CURRENT (mA)
vs. Collector Current (NPN-4124)
C
8
W
1
X
Sep
9
10
Y
3000/Tape & Reel
Packaging
Oct
O
Z
100
MMDT4146
A
Nov
N
© Diodes Incorporated
January 2009
1,000
B
Dec
D
C

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