MMDT4146-7 Diodes Zetex, MMDT4146-7 Datasheet - Page 2

• Manufacturer Part Number: MMDT4146-7
• Description: TRANSISTOR COMP PAIR 40V SOT-363
• Manufacturer: Diodes Zetex

Specifications of MMDT4146-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 2mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: MMDT4146DITR; MMDT4146TR; MMDT4146TR

Electrical Characteristics, NPN 4124 Section
Electrical Characteristics, PNP 4126 Section
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
MMDT4146
Document number: DS30162 Rev. 11 - 2
6. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
www.diodes.com
V
V
V
Symbol
V
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
(BR)CBO
(BR)CEO
(BR)EBO
I
I
C
CE(SAT)
BE(SAT)
C
I
C
h
I
CBO
EBO
NF
C
h
h
CBO
EBO
NF
2 of 5
h
f
obo
FE
f
ibo
T
obo
fe
FE
@T
ibo
@T
fe
T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Min
120
120
300
Min
-4.0
120
120
250
5.0
-25
-25
30
25
60
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.40
-0.95
Max
0.30
0.95
Max
360
480
360
480
-50
-50
4.0
8.0
5.0
4.5
4.0
50
50
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
MHz
Unit
MHz
nA
nA
dB
nA
nA
dB
pF
pF
pF
pF
⎯
⎯
⎯
⎯
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
I
I
I
V
V
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
C
C
E
C
C
C
C
CB
EB
CB
EB
CE
CE
CE
CB
EB
CB
EB
CE
CE
CE
S
S
= 10μA, I
= -10μA, I
= 10μA, I
= 1.0mA, I
= 2.0mA, V
= 50mA, V
= 50mA, I
= 50mA, I
= -10μA, I
= -1.0mA, I
= -2.0mA, V
= -50mA, V
= -50mA, I
= -50mA, I
= 1.0kΩ, f = 1.0kHz
= 1.0kΩ, f = 1.0kHz
= 20V, I
= 3.0V, I
= 1.0V, I
= 5.0V, I
= -20V, I
= -3.0V, I
= -1.0V, I
= -5.0V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -20V, I
Test Condition
Test Condition
C
E
E
B
B
C
E
C
C
B
C
C
E
B
B
C
= 0
= 0
B
C
C
C
CE
CE
= 0V
= 5.0mA
= 5.0mA
= 0
= 0
= 10mA,
CE
CE
= 0
= 0V
= 2.0mA,
= 100μA,
= 0V
= -5.0mA
= -5.0mA
= -10mA,
= 0
= 0V
= -2.0mA,
= -100μA,
= 1.0V
= 1.0V
= -1.0V
= -1.0V
MMDT4146
© Diodes Incorporated
January 2009
C
E
E
C
= 0
= 0
= 0
= 0