PBSS4240DPN,115 NXP Semiconductors, PBSS4240DPN,115 Datasheet - Page 9
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PBSS4240DPN,115
Manufacturer Part Number
PBSS4240DPN,115
Description
TRANS NPN/PNP 40V 1.35A SC-74
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4240DPN115.pdf
(12 pages)
Specifications of PBSS4240DPN,115
Package / Case
SC-74-6
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
1.35A, 1.1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 200mA, 2A / 530mV @ 200mA, 2A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 500mA, 5V / 300 @ 100mA, 5V
Power - Max
1.1W
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
50
Minimum Operating Temperature
- 65
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
+/- 40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1.35 A, - 1.1 A
Maximum Dc Collector Current
+/- 3 A
Power Dissipation
370 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4349-2
934057314115
PBSS4240DPN T/R
PBSS4240DPN T/R
934057314115
PBSS4240DPN T/R
PBSS4240DPN T/R
NXP Semiconductors
2003 Feb 20
handbook, halfpage
40 V low V
R CEsat
TR2 (PNP); I
(1) T
(2) T
(3) T
Fig.14 Collector-emitter equivalent on-resistance
(Ω)
10
10
10
10
amb
amb
amb
−1
−10
1
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
as a function of collector current; typical
values.
C
/I
B
= 20.
−1
CEsat
−10
(3)
(1)
NPN/PNP transistor
−10
(2)
2
−10
3
I C (mA)
MHC470
−10
4
9
PBSS4240DPN
Product data sheet