PBSS4240DPN,115 NXP Semiconductors, PBSS4240DPN,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS4240DPN,115
• Description: TRANS NPN/PNP 40V 1.35A SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBSS4240DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 1.35A, 1.1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 200mA, 2A / 530mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
• Power - Max: 1.1W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Minimum Operating Temperature: - 65
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: +/- 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1.35 A, - 1.1 A
• Maximum Dc Collector Current: +/- 3 A
• Power Dissipation: 370 mW
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4349-2; 934057314115; PBSS4240DPN T/R; PBSS4240DPN T/R

NXP Semiconductors
2003 Feb 20
handbook, halfpage
40 V low V
R CEsat
TR2 (PNP); I
(1) T
(2) T
(3) T
Fig.14 Collector-emitter equivalent on-resistance
(Ω)
10
10
10
10
amb
amb
amb
−1
−10
1
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
as a function of collector current; typical
values.
C
/I
B
= 20.
−1
CEsat
−10
(3)
(1)
NPN/PNP transistor
−10
(2)
2
−10
3
I C (mA)
MHC470
−10
4
9
PBSS4240DPN
Product data sheet