IMZ4T108 Rohm Semiconductor, IMZ4T108 Datasheet - Page 3

• Manufacturer Part Number: IMZ4T108
• Description: TRANS NPN/PNP 32V 500MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMZ4T108

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 250MHz, 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V, - 32 V
• Emitter- Base Voltage Vebo: 5 V, - 5 V
• Continuous Collector Current: 500 mA, - 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 250 MHz at NPN, 200 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 250 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMZ4T108; IMZ4T108TR

Transistors
Tr
Electrical characteristic curves
1
0.05
0.02
Fig.1 Grounded emitter propagation
0.5
0.2
0.1
(NPN)
0.5
0.2
0.1
50
20
10
1
5
2
1
0.5 1
Fig.4 Collector-emitter saturation
0
50
20
10
Fig.7 Collector output capacitance vs.
BASE TO EMITTER VOLTAGE : V
Ta = 25°C
5
2
0.5
l
C
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
/l
0.2
B
= 10
characteristics
COLLECTOR CURRENT : I
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2
voltage vs. collector current
1
0.4
5
0.6
2
10 20
0.8
5
1.0
50 100
1.2
10
C
200 500
(mA)
V
1.4
CE
Ta = 25°C
f = 1MHz
I
I
20
BE
E
C
= 6V
=0A
=0A
: V
(V)
1.6
EB
CB
1000
(
(
V)
V)
50
100
1000
50
500
200
100
50
20
10
0
COLLECTOR TO EMITTER VOLTAGE : V
0
0.1
Ta = 25°C
Fig.5 DC current gain vs. collector
Fig.2 Grounded emitter output
0.2
COLLECTOR CURRENT : I
0.5
current
1
characteristics ( Ι )
1 2
2
5
10
20
3
50 100
C
I
4
B
(mA)
V
200
= 0A
CE
= 3V
5001000
CE
(V)
5
500
400
300
200
100
500
200
100
50
0
COLLECTOR TO EMITTER VOLTAGE : V
− 0.5
0
Fig.6 Gain bandwidth product vs.
Fig.3 Grounded emitter output
− 1
EMITTER CURRENT : I
emitter current
1
characteristics ( ΙΙ )
− 2
Rev.A
2
− 5
3
− 10
E
(mA)
2mA
− 20
Ta = 25°C
Ta = 25°C
V
1.0mA
0.8mA
0.6mA
IMZ4
4
I
CE
1.8mA
1.6mA
1.4mA
1.2mA
0.4mA
0.2mA
B
= 0A
=5V
CE
3/4
− 50
(V)
5