IMZ4T108 Rohm Semiconductor, IMZ4T108 Datasheet

TRANS NPN/PNP 32V 500MA SOT-457

IMZ4T108

Manufacturer Part Number
IMZ4T108
Description
TRANS NPN/PNP 32V 500MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of IMZ4T108

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
300mW
Frequency - Transition
250MHz, 200MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
32 V, - 32 V
Emitter- Base Voltage Vebo
5 V, - 5 V
Continuous Collector Current
500 mA, - 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Frequency
250 MHz at NPN, 200 MHz at PNP
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
250 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMZ4T108
IMZ4T108TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMZ4T108
Manufacturer:
RENES
Quantity:
6 000
Part Number:
IMZ4T108
Manufacturer:
ROHM
Quantity:
6 156
Part Number:
IMZ4T108
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose transistor
(dual transistors)
IMZ4
1) Includes a 2SA1036K and a 2SC411K
2) Mounting possible with SMT3 automatic
3) Transistor elements are independent,
4) High collector current.
5) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN / PNP silicon transistor
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Features
Structure
Absolute maximum ratings (Ta=25°C)
200mW per element must not be exceeded.
Equivalent circuit
transistor in a SMT package.
mounting machines.
eliminating interference.
I
C
=500mA
Tr
2
(4)
(3)
Parameter
(5)
(2)
Tr
(6)
(1)
1
Symbol
V
V
V
Tstg
Pd
Tj
CBO
CEO
I
EBO
C
Tr
1
500
40
32
5
( NPN)
300 (TOTAL)
−55 to +150
Limits
150
Tr
−500
−40
−32
−5
2
( PNP)
External dimensions (Unit : mm)
ROHM : SMT6
EIAJ : SC-74
All terminals have same dimensions
Unit
mW
mA
°C
°C
V
V
V
0.95 0.95
(4)
(3)
2.9±0.2
1.9±0.2
0.3
−0.05
+0.1
(5)
(2)
(6)
(1)
0.15 −0.06
Rev.A
+0.1
1.1 +0.2
Abbreviated symbol: Z4
0.8±0.1
−0.1
0 to 0.1
IMZ4
1/4

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IMZ4T108 Summary of contents

Page 1

Transistors General purpose transistor (dual transistors) IMZ4 Features 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) High collector current. I ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Tr (NPN) 1 Parameter Symbol Collector-base breakdown voltage BV Collector-emitter breakdown voltage BV Emitter-base breakdown voltage BV Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage V DC current transfer ratio Transition frequency Output capacitance ∗ ...

Page 3

Transistors Electrical characteristic curves Tr (NPN 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded emitter ...

Page 4

Transistors Tr (PNP) 2 −500 = − 100°C −200 25°C −100 −55°C −50 −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 − − − − − − − − − − − 0 0.2 0.4 0.6 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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