IMX9T110 Rohm Semiconductor, IMX9T110 Datasheet - Page 3

• Manufacturer Part Number: IMX9T110
• Description: TRANS DUAL NPN 20V 500MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMX9T110

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 560 @ 10mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 350MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 20V
• Gain Bandwidth Ft Typ: 350MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 500mA
• Transistor Case: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 12 V
• Continuous Collector Current: 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 350 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 560
• Gain Bandwidth Product Ft: 350 MHz
• Dc Current Gain Hfe: 560
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMX9T110; IMX9T110TR

Transistors
100mV(rms)
Fig.7 Collector-emitter saturation
10000
Ron measurement circuit
2000
1000
5000
2000
1000
Input
1kHz
500
200
100
100
500
200
50
20
10
50
20
10
Vi
Fig.10 Gain bandwidth product vs.
5
2
1
1
voltage vs. collector current ( )
2
COLLECTOR CURRENT : I
2
EMITTER CURRENT : I
Ta 100 C
R
emitter current
5
5
L
1k
25 C
25 C
10 20
10 20
Ron
50 100 200 5001000
50 100 200 500 1000
I
Measured using
pulse current.
Vi-V
Ta 25 C
V
Measured using
pulse current.
C
/ I
V
CE
E
B
0
C
(mA)
0
25
10V
(mA)
I
R
B
L
V
Fig.8 Base-emitter saturation
10000
Output
5000
2000
1000
200
100
500
V
1000
50
20
10
500
200
100
Fig.11 Collector output capacitance
0
50
20
10
1
5
2
1
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
voltage vs. collector current ( )
2
COLLECTOR CURRENT : I
vs. collector-base voltage
5 10 20
I
0.5 1
C
/I
B
100
10
25
50
2
50 100 200
5
10 20
C
Ta 25 C
(mA)
Pulsed
Ta 25 C
f 1MHz
I
E
500 1000
0A
50 100
CB
(V)
Fig.9 Base-emitter saturation voltage
10000
5000
2000
1000
500
200
100
50
20
10
100
0.5
0.2
0.1
50
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2
1
Fig.12 Output-on resistance vs.
vs. collector current ( )
2
COLLECTOR CURRENT : I
Ta
BASE CURRENT : I
100 C
5 10
25 C
25 C
base current
20
50 100 200
0.5
l
Measured using
pulse current.
C
Ta=25 C
f=1kHz
Vi=100mV( rms)
R
B
1
/l
B
L
(mA)
=1k
C
10
(mA)
IMX9
2
5001000
5
10