IMX9T110 Rohm Semiconductor, IMX9T110 Datasheet - Page 2

• Manufacturer Part Number: IMX9T110
• Description: TRANS DUAL NPN 20V 500MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMX9T110

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 560 @ 10mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 350MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 20V
• Gain Bandwidth Ft Typ: 350MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 500mA
• Transistor Case: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 12 V
• Continuous Collector Current: 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 350 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 560
• Gain Bandwidth Product Ft: 350 MHz
• Dc Current Gain Hfe: 560
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMX9T110; IMX9T110TR

Transistors
10000
Part No.
IMX9
Packaging specifications
Electrical characteristic curves
5000
2000
1000
2.0
1.6
1.2
0.8
0.4
500
200
100
Fig.1 Grounded emitter output
COLLECTOR TO EMITTER VOLTAGE : V
50
20
10
0
0
1
Fig.4 DC current gain vs. collector
Ta=25 C
2.0 A
1.8 A
2
COLLECTOR CURRENT : I
characteristics( )
0.1
current ( )
5
Packaging type
Code
Basic ordering unit (pieces)
10 20
0.2
0.3
50 100 200 500 1000
1V
Measured using
pulse current.
Ta 25 C
C
0.4
V
(mA)
CE
3V
1.6 A
1.4 A
1.2 A
1.0 A
0.8 A
0.6 A
0.4 A
0.2 A
I
B
5V
=0
CE
0.5
(V)
10000
1000
5000
2000
1000
800
600
400
200
Taping
200
100
500
T110
COLLECTOR TO EMITTER VOLTAGE : V
3000
Fig.2 Grounded emitter output
50
20
10
0
0
1
1.4mA
1.6mA
1.8mA 2.0mA
Fig.5 DC current gain vs.
2
COLLECTOR CURRENT : I
characteristics ( )
2
5
collector current ( )
10 20
Ta 100 C
4
I
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
B
25 C
25 C
0mA
50 100 200 500 1000
6
1.2mA
Ta 25 C
Measured using
pulse current.
V
Measured using
pulse current.
CE
C
3V
(mA)
8
CE
10
(V)
Fig.6 Collector-emitter saturation
2000
1000
1000
Fig.3 Grounded emitter propagation
500
200
100
500
200
100
50
20
10
50
20
10
5
2
5
2
1
1
0
I
C
BASE TO EMITTER VOLTAGE : V
/I
voltage vs. collector current ( )
2
B
10
50
25
COLLECTOR CURRENT : I
0.2
characteristics
Ta=100 C
100
5
25 C
25 C
0.4
10 20
0.6
50 100 200 5001000
0.8
Ta 25 C
Measured using
pulse current.
Measured using
pulse current.
V
CE
1.0
C
3V
(mA)
IMX9
1.2
BE
(V)
1.4