IMX1T110 Rohm Semiconductor, IMX1T110 Datasheet - Page 2

• Manufacturer Part Number: IMX1T110
• Description: TRANS DUAL NPN 50V 150MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMX1T110

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 150mA
• Operating Temperature: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz
• Dc Current Gain Hfe: 120
• Operating Temperature Range: -55°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IMX1T110TR

Transistors
! ! ! ! Electrical characteristics (Ta = 25°C)
! ! ! ! Packaging specifications
! ! ! ! Electrical characteristic curves
Type
EMX1
UMX1N
IMX1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
0.5
0.2
0.1
Fig.1 Grounded emitter propagation
50
20
10
5
2
1
0
BASE TO EMITTER VOLTAGE : V
0.2
characteristics
Parameter
0.4
Package
Code
Basic ordering
unit (pieces)
0.6
0.8
1.0
1.2
V
1.4
CE
BE
= 6V
Symbol
(V)
1.6
BV
BV
BV
V
8000
T2R
Cob
I
I
h
CE (sat)
CBO
EBO
f
FE
CBO
CEO
EBO
T
Min.
120
60
50
7
−
−
−
−
−
Taping
3000
100
80
60
40
20
TN
COLLECTOR TO EMITTER VOLTAGE : V
0
Typ. Max. Unit
180
0
Fig.2 Grounded emitter output
−
−
−
−
−
−
−
2
Ta=25˚C
0.4
560
0.1
0.1
0.4
3.5
−
−
−
−
characteristics ( I )
T110
3000
MHz
PF
µA
µA
0.8
V
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
E
C
= 50µA
= 1mA
= 50µA
CB
EB
/I
CE
CE
CB
1.2
B
=7 V
= 60V
= 6V, I
= 12V, I
= 12V, I
= 50mA/5mA
1.6
C
= 1mA
0.50mA
E
E
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
=− 2mA, f = 100MHz
= 0A, f = 1MHz
B
=0A
Conditions
CE
2.0
(V)
EMX1 / UMX1N / IMX1
10
COLLECTOR TO EMITTER VOLTAGE : V
8
6
4
2
0
0
Ta=25˚C
Fig.3 Grounded emitter output
∗
4
characteristics ( II )
8
30µA
27µA
24µA
21µA
18µA
15µA
12µA
I
B
9µA
6µA
3µA
=0A
12
16
CE
2/3
(V)
20