IMX1T110 Rohm Semiconductor, IMX1T110 Datasheet
IMX1T110
Manufacturer Part Number
IMX1T110
Description
TRANS DUAL NPN 50V 150MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.UMX1NTN.pdf
(4 pages)
Specifications of IMX1T110
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
180MHz
Power Dissipation Pd
300mW
Dc Collector Current
150mA
Operating Temperature
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Continuous Collector Current
150 mA
Maximum Dc Collector Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Frequency
180 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
180 MHz
Dc Current Gain Hfe
120
Operating Temperature Range
-55°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMX1T110TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IMX1T110
Manufacturer:
RENES
Quantity:
45 000
Company:
Part Number:
IMX1T110
Manufacturer:
ROHM
Quantity:
8 880
Part Number:
IMX1T110
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
! ! ! ! Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
! ! ! ! Structure
Epitaxial planar type
NPN silicon transistor
! ! ! ! Equivalent circuit
The following characteristics apply to both Tr
! ! ! ! Absolute maximum ratings (Ta = 25°C)
∗
∗
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
package.
automatic mounting machines.
EMX1 / UMX1N
interference.
Tr
2
(4)
(3)
Parameter
EMX1, UMX1N
IMX1
(2)
(5)
Tr
(1)
(6)
1
Symbol
V
V
V
Tstg
P
CBO
CEO
I
Tj
IMX1
EBO
C
C
Tr
2
150 (TOTAL)
300 (TOTAL)
(3)
(4)
−55∼+150
Limits
150
150
(2)
(5)
60
50
7
Tr
(1)
(6)
1
1
and Tr
Unit
mW
mA
˚C
˚C
V
V
V
2.
∗
∗
1
2
! ! ! ! External dimensions (Units : mm)
EMX1
ROHM : EMT6
UMX1N
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
IMX1
0.3to0.6
0.1Min.
Abbreviated symbol : X1
Abbreviated symbol : X1
Abbreviated symbol : X1
EMX1 / UMX1N / IMX1
(4)
(5)
(6)
1.6
2.8
1.25
2.1
1.2
1.6
Each lead has same dimensions
Each lead has same dimensions
(3)
(2)
(1)
Each lead has same dimensions
1/3
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IMX1T110 Summary of contents
Page 1
Transistors General purpose transistors (dual transistors) EMX1 / UMX1N / IMX1 ! ! ! ! Features 1) Two 2SC2412K chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. ...
Page 2
Transistors ! ! ! ! Electrical characteristics (Ta = 25°C) Parameter Symbol Collector-base breakdown voltage BV CBO Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage BV EBO Collector cutoff current I CBO Emitter cutoff current I EBO Collector-emitter saturation voltage ...
Page 3
Transistors 500 Ta=25˚C V =5V 200 100 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.4 DC current gain vs. collector current ( I ) 0.5 ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...