UMZ1NTR Rohm Semiconductor, UMZ1NTR Datasheet - Page 3

• Manufacturer Part Number: UMZ1NTR
• Description: TRANS NPN/PNP 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMZ1NTR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: + 50 V / - 50 V
• Emitter- Base Voltage Vebo: + 7 V, - 6 V
• Continuous Collector Current: + 150 mA / - 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz at NPN, 140 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz, 140 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UMZ1NTRTR

Transistors
Fig.7 Collector-emitter saturation
Fig.4 DC current gain vs. collector
500
200
100
Fig.10 Collector output capacitance vs.
0.05
0.02
0.01
50
20
10
0.5
0.2
0.1
0.2
0.2
20
10
Ta=25˚C
5
2
1
0.2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
0.5
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
0.5
voltage vs. collector current ( II )
Emitter input capacitance vs.
current ( I )
collector-base voltage
emitter-base voltage
Ta=100˚C
1
0.5
1
−55˚C
25˚C
2
2
1
5
5
2
10 20
V
10
CE
=5V
3V
1V
5
20
50 100 200
C
C
10
(mA)
(mA)
50 100 200
I
C
Ta=25˚C
f = 1MHz
I
I
E
C
/I
: V
=0A
=0A
20
B
=10
EB
CB
(V)
(V)
50
Fig.8 Collector-emitter saturation
Fig.5
Fig.11 Base-collector time constant vs.
500
200
100
0.05
0.02
0.01
50
20
10
0.5
0.2
0.1
200
100
0.2
0.2
50
20
10
−0.2
0.5
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
voltage vs. collector current ( III )
emitter current
DC current gain vs. collector
current ( II )
0.5 1
EMITTER CURRENT : I
1
Ta=100˚C
−0.5
−55˚C
2
25˚C
2
Ta=100˚C
5
−1
−55˚C
10 20
25˚C
5
10
−2
E
C
50 100 200
C
20
(mA)
(mA)
(mA)
V
I
CE
C
Ta=25 ˚C
f=32MH
V
/I
−5
=5V
CB
B
=50
50 100
=6V
Z
−10
EMZ1 / UMZ1N / IMZ1A
0.05
0.02
0.01
500
200
100
Fig.6 Collector-emitter saturation
0.5
0.2
0.1
50
Fig.9 Gain bandwidth product vs.
−0.5
0.2
−1
0.5
COLLECTOR CURRENT : I
EMITTER CURRENT : I
voltage vs. collector current ( I )
emitter current
1
−2
I
C
2
/I
B
Rev.A
=50
−5
20
10
5
−10
10
−20
20
E
(mA)
C
Ta=25˚C
V
(mA)
50 100 200
CE
Ta=25 ˚C
−50 −100
=6V
3/4