UMZ1NTR Rohm Semiconductor, UMZ1NTR Datasheet - Page 2

• Manufacturer Part Number: UMZ1NTR
• Description: TRANS NPN/PNP 50V 150MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMZ1NTR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 180MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Operating: RoHS Compliant
• Configuration: Dual
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: + 50 V / - 50 V
• Emitter- Base Voltage Vebo: + 7 V, - 6 V
• Continuous Collector Current: + 150 mA / - 150 mA
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 180 MHz at NPN, 140 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz, 140 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UMZ1NTRTR

Transistors
Tr
Tr
Tr
Type
EMZ1
UMZ1N
IMZ1A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
1
2
1
Fig.1 Grounded emitter propagation
(NPN)
0.5
0.2
0.1
(NPN)
(PNP)
50
20
10
5
2
1
0
BASE TO EMITTER VOLTAGE : V
0.2
characteristics
Parameter
Parameter
0.4
Package
Code
Basic ordering
unit (pieces)
0.6
0.8
1.0
1.2
V
1.4
CE
Symbol
Symbol
BV
BV
BV
BV
BE
BV
V
BV
V
= 6V
Cob
Cob
I
I
I
I
CE (sat)
h
CE (sat)
h
CBO
EBO
CBO
EBO
(V)
f
f
8000
1.6
FE
FE
T2R
CBO
CEO
EBO
CBO
CEO
EBO
T
T
Min.
Min.
120
−60
−50
120
60
50
−6
7
−
−
−
−
−
−
−
−
−
−
100
Taping
COLLECTOR TO EMITTER VOLTAGE : V
80
60
40
20
Typ. Max. Unit
Typ. Max. Unit
180
140
3000
0
TR
−
−
−
−
−
−
−
2
−
−
−
−
−
−
−
4
Fig.2 Grounded emitter output
0
Ta=25˚C
−0.1
−0.1
−0.5
560
560
0.1
0.1
0.4
3.5
−
−
−
−
−
−
−
−
5
0.4
characteristics ( I )
MHz
MHz
T108
3000
PF
PF
µA
µA
µA
µA
V
V
V
V
V
V
V
V
−
−
0.8
I
I
I
V
V
I
V
V
V
I
I
I
V
V
I
V
V
V
C
C
E
C
C
C
E
C
= 50µA
CB
EB
CE
= −50µA
CB
EB
CE
= 50µA
= 1mA
/I
CE
CB
= −50µA
= −1mA
/I
CE
CB
B
B
=7 V
= − 6 V
= 60V
= 6V, I
= 12V, I
= 12V, I
= −60V
= −6V, I
= −12V, I
= −12V, I
= 50mA/5mA
= −50mA/−5mA
1.2
C
= 1mA
C
E
E
= −1mA
=− 2mA, f = 100MHz
= 0A, f = 1MHz
E
E
1.6
= 2mA, f = 100MHz
= 0A, f = 1MHz
Conditions
Conditions
0.50mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
=0A
CE
(V)
2.0
EMZ1 / UMZ1N / IMZ1A
10
8
6
4
2
0
COLLECTOR TO EMITTER VOLTAGE : V
0
Ta=25˚C
Fig.3 Grounded emitter output
4
characteristics ( II )
8
Rev.A
30µA
27µA
24µA
21µA
18µA
15µA
12µA
I
B
9µA
6µA
3µA
=0A
12
16
CE
2/4
20
(V)