ZXTDA1M832TA Diodes Zetex, ZXTDA1M832TA Datasheet - Page 4

• Manufacturer Part Number: ZXTDA1M832TA
• Description: TRANS NPN/PNP DL 15/-12V 8-MLP
• Manufacturer: Diodes Zetex

Specifications of ZXTDA1M832TA

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 4.5A, 4A
• Voltage - Collector Emitter Breakdown (max): 15V, 12V
• Vce Saturation (max) @ Ib, Ic: 280mV @ 50mA, 4.5A / 300mV @ 150mA, 4A
• Current - Collector Cutoff (max): 25nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 3A, 2V / 180 @ 2.5A, 2V
• Power - Max: 1W
• Frequency - Transition: 120MHz, 110MHz
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTDA1M832TATR

NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
ZXTDA1M832
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
= 25°C unless otherwise stated).
MIN.
200
300
200
150
7.5
40
15
80
4
TYP.
0.94
0.88
165
240
415
450
320
240
120
120
160
8.2
70
18
70
80
30
8
MAX.
1.00
0.95
100
200
280
25
25
25
14
40
UNIT
MHz
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
V
V
V
V
V
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
CC
=100 A
=100 A
=10mA*
=0.1A, I
=1A, I
=3A, I
=4.5A, I
=4.5A, I
=4.5A, V
=10mA, V
=200mA, V
=3A, V
=5A, V
=12A, V
=-50mA, V
=I
=6V
=12V
=32V
=-10V, f=1MHz
=-6V, I
ISSUE 1 - JUNE 2002
B2
=-10mA
B
B
CE
CE
=10mA*
=50mA
B
B
B
CE
CE
C
=10mA*
=50mA
=50mA*
=2V*
=2V*
=-1A
CE
=2V*
CE
=2V*
CE
=2V*
=-10V
=2V*