ZXTDA1M832TA Diodes Zetex, ZXTDA1M832TA Datasheet - Page 2

• Manufacturer Part Number: ZXTDA1M832TA
• Description: TRANS NPN/PNP DL 15/-12V 8-MLP
• Manufacturer: Diodes Zetex

Specifications of ZXTDA1M832TA

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 4.5A, 4A
• Voltage - Collector Emitter Breakdown (max): 15V, 12V
• Vce Saturation (max) @ Ib, Ic: 280mV @ 50mA, 4.5A / 300mV @ 150mA, 4A
• Current - Collector Cutoff (max): 25nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 3A, 2V / 180 @ 2.5A, 2V
• Power - Max: 1W
• Frequency - Transition: 120MHz, 110MHz
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXTDA1M832TATR

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ZXTDA1M832
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)(f)
Continuous Collector Current (b)(f)
Base Current
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Storage Temperature Range
Junction Temperature
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
SYMBOL
V
V
V
I
I
I
I
P
P
P
P
P
P
T
T
CM
C
C
B
D
D
D
D
D
D
stg
j
CBO
CEO
EBO
2
SYMBOL
R
R
R
R
R
R
JA
JA
JA
JA
JA
JA
NPN
7.5
4.5
40
15
15
5
-55 to +150
1000
2.45
19.6
1.13
13.6
150
1.5
1.7
12
24
1
8
8
3
VALUE
83.3
73.5
41.7
125
111
51
PNP
-7.5
-4.4
-20
-12
-12
-4
ISSUE 1 - JUNE 2002
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
mA
°C
°C
W
W
W
W
W
W
V
V
V
A
A
A