MCR08BT1 ON Semiconductor, MCR08BT1 Datasheet - Page 5

• Manufacturer Part Number: MCR08BT1
• Description: THYRISTOR SCR 0.8A 200V SOT223
• Manufacturer: ON Semiconductor

Specifications of MCR08BT1

• Scr Type: Sensitive Gate
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Current - On State (it (rms) (max): 800mA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - On State (it (av)) (max): -
• Other names: MCR08BT1OSCT

10000
1000
100
500
100
1.0
0.1
5.0
1.0
10
50
10
1.0
10
Voltage and Gate-Cathode Termination Resistance
Figure 16. Exponential Static dv/dt versus Peak
400 V
Figure 14. Holding Current Range versus
10
R
R
GK
GK
, GATE‐CATHODE RESISTANCE (OHMS)
, GATE‐CATHODE RESISTANCE (OHMS)
Gate-Cathode Resistance
300 V
200 V
100
500 V
100
I
10000
GT
1000
500
100
5.0
1.0
= 7 mA
50
10
10
1000
100 V
Figure 18. Exponential Static dv/dt versus
Gate-Cathode Termination Resistance and
1000
T
J
Product Trigger Current Sensitivity
50 V
= 25 C
T
10,000
J
100
= 110 C
I
GT
I
GATE‐CATHODE RESISTANCE (OHMS)
GT
= 5 mA
= 48 mA
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100,000
10,000
1000
I
GT
5
10000
10000
= 15 mA
5000
1000
1000
500
100
500
100
5.0
1.0
0.5
0.1
5.0
1.0
Temperature and Gate-Cathode Termination Resistance
50
10
50
10
0.01
10
Figure 15. Exponential Static dv/dt versus Junction
Gate-Cathode Capacitance and Resistance
10,000
Figure 17. Exponential Static dv/dt versus
400 V (PEAK)
I
T
GT
J
= 110 C
= 70 mA
100
R
GK
I
GT
0.1
C
, GATE‐CATHODE RESISTANCE (OHMS)
GK
= 35 mA
, GATE‐CATHODE CAPACITANCE (nF)
100,000
125
1000
R
R
GK
1.0
GK
= 100
= 1.0 k
110
10,000
75
V
10
pk
T
R
J
GK
= 400 V
= 25
= 10 k
50
100,000
100