MCR08B, MCR08M
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
November, 2008 − Rev. 6
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, R
T
On-State Current RMS
(All Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle Sine Wave, 60 Hz, T
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(T
Average Gate Power
(T
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction−to−Ambient
PCB Mounted per Figure 1
Thermal Resistance, Junction−to−Tab
Measured on Anode Tab Adjacent to Epoxy
Maximum Device Temperature for Solder-
ing Purposes (for 10 Seconds Maximum)
PNPN devices designed for line powered consumer applications
J
Sensitive Gate Trigger Current
Blocking Voltage to 600 V
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2008
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
C
C
= 25 to 110 C)
DRM
= 80 C, t = 1.0 ms)
= 80 C, t = 8.3 ms)
and V
RRM
GK
= 1 kW
Rating
Rating
for all types can be applied on a continuous basis. Ratings
(T
C
J
= 80 C)
= 25 C unless otherwise noted)
Preferred Device
MCR08BT1
MCR08MT1
C
= 25 C)
Symbol
Symbol
I
P
V
V
T(RMS)
R
R
I
P
T
TSM
G(AV)
DRM,
RRM
I
T
T
GM
stg
qJA
qJT
2
J
L
t
−40 to +110
−40 to +150
Value
Value
0.01
200
600
156
260
0.8
8.0
0.4
0.1
25
1
Unit
Unit
A
C/W
C/W
W
W
V
A
A
C
C
C
2
s
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MCR08BT1
MCR08BT1G
MCR08MT1
MCR08MT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Device
(Note: Microdot may be in either location)
1
2
3
4
ORDERING INFORMATION
200 thru 600 VOLTS
0.8 AMPERES RMS
CR08x = Device Code
A
Y
W
G
A
http://onsemi.com
PIN ASSIGNMENT
CASE 318E
STYLE 10
SOT−223
(Pb−Free)
SOT−223
SOT−223
SOT−223
(Pb−Free)
Package
SOT−223
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x = B or M
SCRs
Publication Order Number:
Cathode
Anode
Anode
Gate
1000/Tape & Reel
1000/Tape & Reel
G
1000/Tape &Reel
1000/Tape &Reel
1
Shipping
MARKING
DIAGRAM
K
MCR08BT1/D
CR08x G
AYW
G
†