TN1515-600B STMicroelectronics, TN1515-600B Datasheet - Page 3

• Manufacturer Part Number: TN1515-600B
• Description: IC SCR 15A 600V DPAK
• Manufacturer: STMicroelectronics

Specifications of TN1515-600B

• Scr Type: Standard Recovery
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 9.5A
• Current - On State (it (rms)) (max): 15A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 5µA
• Current - Non Rep. Surge 50, 60hz (itsm): 150A, 165A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 15A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TN1515-600B
Figure 3.
Figure 5.
Figure 7.
2.5
2.0
1.5
1.0
0.5
0.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.E+04
1.E+03
1.E+02
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100110120130
0
I
0.01
T(AV)
I
H
& I
D.C.
L
(A)
I
GT
dI/dt limitation
Average and DC on-state
current versus ambient
temperature, PCB FR4, copper
thickness 35 µm
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Non-repetitive surge peak
on-state current for a sinusoidal
pulse with width t
corresponding value of I
25
=180°
0.10
T amb (°C)
50
t
P
T
(ms)
j
(°C)
75
I
p
TSM
1.00
< 10 ms and
100
I²t
S
2
T
CU
j
t
initial=25°C
=0.5cm²
10.00
125
Figure 4.
Figure 6.
Figure 8.
100
180
160
140
120
100
100.0
10
80
60
40
20
10.0
1.E-03
1
0
1.0
0.1
1
0.0
S
CU
= 0.5 cm²
Repetitive
T
1.E-02
T
C
0.5
=109°C
j
=125°C
Thermal impedance, junction to
ambient, versus pulse duration,
PCB FR4, copper thickness 35 µm
Surge peak on-state current versus
number of cycles
On-state characteristics (maximum
values)
1.0
Non repetitive
T
j
1.E-01
initial=25°C
10
T
j
=25°C
1.5
Number of cycles
t
1.E+00
P
V
(s)
TM
2.0
(V)
1.E+01
2.5
100
Characteristics
3.0
1.E+02
tp=10ms
V
R
One cycle
T
to
D
j
= 25 m
= 0.85 V
max. :
3.5
1.E+03
1000
4.0
3/7