BTW68-1200RG STMicroelectronics, BTW68-1200RG Datasheet - Page 3

• Manufacturer Part Number: BTW68-1200RG
• Description: SCR 30A 1200V ISOLATED TOP3
• Manufacturer: STMicroelectronics

Specifications of BTW68-1200RG

• Scr Type: Standard Recovery
• Voltage - Off State: 1200V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 2.1V
• Current - On State (it (av)) (max): 19A
• Current - On State (it (rms)) (max): 30A
• Current - Gate Trigger (igt) (max): 50mA
• Current - Hold (ih) (max): 75mA
• Current - Off State (max): 20µA
• Current - Non Rep. Surge 50, 60hz (itsm): 400A, 420A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TOP-3
• Current - On State (it (rms) (max): 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BTW68
Figure 1.
Figure 3.
Figure 5.
2.5
1.5
0.5
50
40
30
20
10
50
40
30
20
10
0
0
2
0
1
-40
0
0
P(W)
I
I
T(AV)
GT H L
-30
= 30°
= 60°
,I ,I [T ] /
(A)
-20
5
= 90°
-10
j
25
I
H
Maximum average power
dissipation versus average on-state
current
Average on-state current versus case
temperature
Relative variation of gate trigger
current versus junction
temperature
& I
I
0
GT H L
L
I
GT
= 120°
10
,I ,I [T =25°C]
10
20
50
j
30
= 180°
15
I
T
T(RMS)
case
T (°C)
40
= 180°
DC
j
(°C)
50 60 70 80 90 100 110 120 130
(A)
20
75
D.C.
25
100
Doc ID 17757 Rev 3
30
360°
125
35
Figure 2.
Figure 4.
Figure 6.
1.00
0.10
350
300
250
200
150
100
50
40
30
20
10
0.01
0.0
50
0
0
0
P(W)
1E-3
1
I
TSM
K=[Z
R = 2°C/W
th
(A)
R = 1°C/W
th(j-c)
20
th
1E-2
R = 3°C/W
th
/R
Correlation between maximum
average power dissipation and
maximum allowable temperature
Relative variation of thermal
impedance versus pulse duration
Surge peak on-state current versus
number of cycles
Z
th(j-c)
th(j-c)
40
10
]
1E-1
Number of cycles
60
R = 0°C/W
T
th
amb
T initial=25°C
j
(°C)
Z
t (s)
th(j-a)
p
1E+0
80
100
100
1E+1
Characteristics
(T
120
amb
= 180°
and T
t =10ms
1E+2
p
One cycle
T
case
lead
140
)
(°C)
1E+3
1000
100
125
3/8
50
75