BT145-800R,127 NXP Semiconductors, BT145-800R,127 Datasheet
BT145-800R,127
Specifications of BT145-800R,127
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BT145-800R
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BT145-800R,127 Summary of contents
Page 1
... T 101 ˚C mb all conduction angles half sine wave ˚C prior to j surge 8 0 / over any 20 ms period 1 Product specification BT145 series MAX. MAX. MAX. UNIT BT145- 500R 600R 800R 500 600 800 300 300 300 SYMBOL MIN. ...
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... T = 125 ˚C D DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / 67 125 ˚C; D DRM(max / / Product specification BT145 series MIN. TYP. MAX. UNIT - - 1.0 K K/W MIN. TYP. MAX. UNIT - 1.1 1 0.6 1.0 V 0.25 0 0.2 1.0 mA MIN. TYP. ...
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... Fig.6. Normalised gate trigger voltage T(RMS Product specification BT145 series BT145 I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT145 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... Fig.11. Transient thermal impedance dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT145 series BT145 typ max 0 BT145 0.1ms 1ms 10ms 0. versus th j-mb pulse width gate open circuit 50 100 ...
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... Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. TO220AB; pin 2 connected to mounting base. 5 Product specification BT145 series 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Product specification BT145 series Rev 1.200 ...