BT145-800R,127 NXP Semiconductors, BT145-800R,127 Datasheet

THYRISTOR 25A 800V TO220AB

BT145-800R,127

Manufacturer Part Number
BT145-800R,127
Description
THYRISTOR 25A 800V TO220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BT145-800R127.pdf (6 pages)

Specifications of BT145-800R,127

Package / Case
TO-220AB-3
Scr Type
Standard Recovery
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1V
Voltage - On State (vtm) (max)
1.5V
Current - On State (it (av)) (max)
16A
Current - On State (it (rms)) (max)
25A
Current - Gate Trigger (igt) (max)
35mA
Current - Hold (ih) (max)
60mA
Current - Off State (max)
1mA
Current - Non Rep. Surge 50, 60hz (itsm)
300A, 330A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
25A
Breakover Current Ibo Max
330 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
1 mA
Forward Voltage Drop
1.5 V
Gate Trigger Voltage (vgt)
1 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
35 mA
Holding Current (ih Max)
60 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3670-5
933826840127
BT145-800R
Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope,
applications
bidirectional
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
October 1997
Thyristors
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
PIN
t
stg
j
DRM
GM
RGM
GM
G(AV)
tab
T
1
2
3
/dt
, V
RRM
cathode
anode
gate
anode
intended
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
blocking
requiring
for
use
voltage
high
in
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 0.2 A/ s
= 50 A; I
,
G
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
tab
= 0.2 A;
1
1 2 3
mb
j
= 25 ˚C prior to
101 ˚C
BT145-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-500R -600R -800R
500
a
MAX. MAX. MAX. UNIT
500R
500
300
16
25
1
MAX.
Product specification
600
300
330
450
200
150
125
0.5
16
25
20
600R
5
5
5
600
300
BT145 series
16
25
1
g
800
800R
800
300
16
25
Rev 1.200
UNIT
k
A/ s
A
˚C
˚C
W
W
V
A
A
A
A
A
V
V
2
V
A
A
A
s

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BT145-800R,127 Summary of contents

Page 1

... T 101 ˚C mb all conduction angles half sine wave ˚C prior to j surge 8 0 / over any 20 ms period 1 Product specification BT145 series MAX. MAX. MAX. UNIT BT145- 500R 600R 800R 500 600 800 300 300 300 SYMBOL MIN. ...

Page 2

... T = 125 ˚C D DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / 67 125 ˚C; D DRM(max / / Product specification BT145 series MIN. TYP. MAX. UNIT - - 1.0 K K/W MIN. TYP. MAX. UNIT - 1.1 1 0.6 1.0 V 0.25 0 0.2 1.0 mA MIN. TYP. ...

Page 3

... Fig.6. Normalised gate trigger voltage T(RMS Product specification BT145 series BT145 I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT145 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... Fig.11. Transient thermal impedance dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT145 series BT145 typ max 0 BT145 0.1ms 1ms 10ms 0. versus th j-mb pulse width gate open circuit 50 100 ...

Page 5

... Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. TO220AB; pin 2 connected to mounting base. 5 Product specification BT145 series 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Product specification BT145 series Rev 1.200 ...

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