BT151-500R,127 NXP Semiconductors, BT151-500R,127 Datasheet - Page 4

• Manufacturer Part Number: BT151-500R,127
• Description: THYRISTOR 12A 500V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-500R,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 132A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 132 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3673-5; 933387880127; BT151-500R

NXP Semiconductors
BT151-500R_5
Product data sheet
Fig 3.
Fig 4.
I
P
(W)
TSM
(A)
tot
10
10
15
10
10
5
0
3
2
10
Total power dissipation as a function of average on-state current; maximum values
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
0
5
dl
T
/dt limit
2
10
4
4
Rev. 05 — 2 March 2009
4
2.8
10
3
conduction
2.2
(degrees)
angle
120
180
30
60
90
SCR, 12 A, 15mA, 500 V, SOT78
6
factor
form
1.57
1.9
2.8
2.2
1.9
a
4
t
T
p
I
BT151-500R
T
j
(s)
initial = 25 C max
I
T(AV)
t
p
© NXP B.V. 2009. All rights reserved.
(A)
003aab830
001aaa956
a = 1.57
I
TSM
t
10
8
2
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