BT169D/01,112 NXP Semiconductors, BT169D/01,112 Datasheet - Page 8

• Manufacturer Part Number: BT169D/01,112
• Description: THYRISTOR 400V 50MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of BT169D/01,112

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 9 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Gate Trigger Voltage (vgt): 0.5 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 5 mA
• Forward Voltage Drop: 1.25 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934019180112

Philips Semiconductors
7. Package information
9397 750 13512
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
3
2
1
0
R
junction temperature.
50
GK
= 1 k .
0
Epoxy meets requirements of UL94 V-0 at
50
100
001aab504
T
j
( C)
150
Rev. 04 — 23 August 2004
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical
values.
1
0
GK
8
inch.
= 1 k .
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT169 series
(1)
(2)
100
Thyristors logic level
T
j
001aab507
( C)
150
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