MCR68-2G ON Semiconductor, MCR68-2G Datasheet - Page 2

• Manufacturer Part Number: MCR68-2G
• Description: THYRISTOR SCR 12A 50V TO220AB
• Manufacturer: ON Semiconductor
• Type: SCRr

Specifications of MCR68-2G

• Scr Type: Standard Recovery
• Voltage - Off State: 50V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 2.2V
• Current - On State (it (av)) (max): 8A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 30mA
• Current - Hold (ih) (max): 50mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 50V
• Off-state Voltage: 50V
• Average On-state Current: 8A
• Hold Current: 50mA
• Gate Trigger Current (max): 30mA
• Gate Trigger Voltage (max): 1.5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 100A
• On State Voltage(max): 2.2@24AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR68-002G; MCR68-2GOS

3. Pulse duration p 300 ms, duty cycle p 2%.
4. Ratings apply for t
5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On-State Voltage
Gate Trigger Current (Continuous dc)
Gate Trigger Voltage (Continuous dc)
Gate Non−Trigger Voltage
Holding Current
Latching Current
Gate Controlled Turn-On Time (Note 5)
Critical Rate-of-Rise of Off-State Voltage
Critical Rate-of-Rise of On-State Current
as 5 time constants of an exponentially decaying current pulse.
(V
(I
(I
(V
(V
(V
(V
(V
(V
(I
(V
I
G
TM
TM
TM
AK
D
D
D
D
D
D
D
= 150 mA
= 12 V, R
= 12 V, R
= 12 Vdc, R
= 12 V, Initiating Current = 200 mA, Gate Open)
= 12 Vdc, I
= Rated V
= Rated V
= 24 A) (Note 3)
= 300 A, t
= 24 A Peak)
= Rated V
L
L
DRM
DRM
w
= 100 W)
= 100 W)
G
DRM
L
= 1 ms) (Note 4)
w
= 150 mA)
= 100 W, T
= 1 ms. See Figure 1 for I
, I
, Gate Open, Exponential Waveform, T
or V
G
= 150 mA)
RRM
, Gate Open)
J
= 125°C)
Characteristic
Characteristic
(T
C
= 25°C unless otherwise noted.)
TM
capability for various durations of an exponentially decaying current waveform. t
http://onsemi.com
J
MCR68−2
= 125°C)
2
T
T
T
J
J
J
= 25°C
= 125°C
= 125°C
I
DRM
Symbol
Symbol
R
dv/dt
R
V
di/dt
V
V
I
T
t
GT
I
qJC
qJA
I
, I
GD
TM
GT
gt
H
L
L
RRM
Min
2.0
0.2
3.0
10
−
−
−
−
−
−
−
−
Max
0.65
0.40
Typ
260
2.0
6.0
7.0
1.0
60
15
−
−
−
−
−
−
Max
2.0
2.2
1.5
10
30
50
60
75
−
−
−
−
w
is defined
°C/W
°C/W
V/ms
A/ms
Unit
Unit
mA
mA
mA
mA
°C
mA
ms
V
V
V