BT300S-600R,118 NXP Semiconductors, BT300S-600R,118 Datasheet - Page 2

• Manufacturer Part Number: BT300S-600R,118
• Description: THYRISTOR 8A 600V DPAK
• Manufacturer: NXP Semiconductors

Specifications of BT300S-600R,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Standard Recovery
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 5A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 65A, 71A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 8A
• Breakover Current Ibo Max: 71 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3684-2; 934048840118; BT300S-600R /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1997
Thyristors
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
, I
D
R
/dt
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform.
I
dI
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
G
= 12 A
D
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 10 A; V
= 67% V
= 12 A; V
/dt = 50 V/ s; R
= 67% V
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
D
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
= 0.1 A
= 0.1 A
= V
= 25 V; dI
T
R
2
= 0.1 A; T
= V
DRM(max)
; T
; T
GK
RRM(max)
j
= 125 ˚C;
j
= 100
Gate open circuit
= 125 ˚C;
TM
; I
/dt = 30 A/ s;
G
j
= 125 ˚C
; T
R
= 0.1 A;
GK
j
= 125 ˚C
= 100
MIN.
MIN.
MIN.
0.25
200
50
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
1000
1.35
100
0.6
0.4
0.1
75
10
10
70
BT300S series
2
2
-
Product specification
BT300M series
MAX.
MAX.
MAX.
2.2
1.6
1.5
0.5
15
40
20
-
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
V/ s
V/ s
K/W
K/W
mA
mA
mA
mA
V
V
V
s
s