C106BG ON Semiconductor, C106BG Datasheet - Page 3
![THYRISTOR SCR 4A 200V TO225AA](/photos/5/66/56603/488-to-225aa_sml.jpg)
C106BG
Manufacturer Part Number
C106BG
Description
THYRISTOR SCR 4A 200V TO225AA
Manufacturer
ON Semiconductor
Specifications of C106BG
Scr Type
Sensitive Gate
Voltage - Off State
200V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
2.2V
Current - On State (it (av)) (max)
2.55A
Current - On State (it (rms)) (max)
4A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
3mA
Current - Off State (max)
10µA
Current - Non Rep. Surge 50, 60hz (itsm)
20A @ 60Hz
Operating Temperature
-40°C ~ 110°C
Mounting Type
Through Hole
Package / Case
TO-225-3
Current - On State (it (rms) (max)
4A
Current Squared Time Rating
1.65
Current, Forward
4 A
Current, Surge
20 A
Package Type
TO-225AA
Primary Type
SCR
Resistance, Thermal, Junction To Case
3 °C/W
Temperature, Junction, Maximum
+110 °C
Temperature, Operating
-40 to +110 °C
Voltage, Forward
2.2 V
Voltage, Reverse
200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
C106BGOS
3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
4. R
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Forward On−State Voltage (Note 3)
Gate Trigger Current (Continuous dc) (Note 4)
Peak Reverse Gate Voltage (I
Gate Trigger Voltage (Continuous dc) (Note 4)
Gate Non−Trigger Voltage (Continuous dc) (Note 4)
Latching Current
Holding Current (V
Critical Rate−of−Rise of Off−State Voltage
Peak Repetitive Forward or Reverse Blocking Current
Symbol
V
I
V
I
V
I
(V
(I
(V
(V
(V
(V
(Initiating Current = 20 mA, R
(V
T
DRM
RRM
H
GK
DRM
RRM
TM
TM
J
AK
AK
AK
AK
AK
AK
= 110°C)
is not included in measurement.
= 4 A)
= Rated V
= 6 Vdc, R
= 6 Vdc, R
= 12 V, R
= 12 V, I
= Rated V
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
G
L
DRM
DRM
= 20 mA, R
L
L
= 100 W, T
D
= 100 W)
= 100 W)
= 12 Vdc)
, Exponential Waveform, R
or V
RRM
J
GK
Characteristic
GR
= 110°C)
, R
GK
= 1 kW)
= 10 mA)
GK
= 1 kW)
= 1 kW)
(T
Voltage Current Characteristic of SCR
C
= 25°C unless otherwise noted.)
GK
= 1 kW,
http://onsemi.com
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
= 25°C
= 110°C
= 25°C
= −40°C
= 25°C
= −40°C
= 25°C
= −40°C
= 25°C
= −40°C
= +110°C
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
3
at V
RRM
(off state)
I
DRM
Symbol
V
dv/dt
V
V
V
on state
I
GRM
GT
I
I
, I
GD
TM
GT
H
L
RRM
+ Current
Forward Blocking Region
Min
0.4
0.5
0.2
I
−
−
−
−
−
−
−
−
−
−
−
−
H
V
TM
(off state)
0.60
0.75
0.20
0.35
0.19
0.33
0.07
Typ
8.0
15
35
−
−
−
−
−
I
DRM
Anode +
at V
Max
100
200
500
2.2
6.0
0.8
1.0
5.0
7.0
3.0
6.0
2.0
DRM
10
−
−
+ Voltage
Unit
V/ms
mA
mA
mA
mA
mA
V
V
V
V