C106BG ON Semiconductor, C106BG Datasheet - Page 2

• Manufacturer Part Number: C106BG
• Description: THYRISTOR SCR 4A 200V TO225AA
• Manufacturer: ON Semiconductor

Specifications of C106BG

• Scr Type: Sensitive Gate
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 2.2V
• Current - On State (it (av)) (max): 2.55A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 3mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 20A @ 60Hz
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current - On State (it (rms) (max): 4A
• Current Squared Time Rating: 1.65
• Current, Forward: 4 A
• Current, Surge: 20 A
• Package Type: TO-225AA
• Primary Type: SCR
• Resistance, Thermal, Junction To Case: 3 °C/W
• Temperature, Junction, Maximum: +110 °C
• Temperature, Operating: -40 to +110 °C
• Voltage, Forward: 2.2 V
• Voltage, Reverse: 200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: C106BGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Peak Repetitive Off−State Voltage (Note 1)
On-State RMS Current
Average On−State Current
Peak Non-Repetitive Surge Current
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
C106B
C106BG
C106D
C106DG
C106D1*
C106D1G*
C106M
C106MG
C106M1*
C106M1G*
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
(Sine Wave, 50−60 Hz, R
T
(180° Conduction Angles, T
(180° Conduction Angles, T
(1/2 Cycle, Sine Wave, 60 Hz, T
(Pulse Width v1.0 msec, T
(Pulse Width v1.0 msec, T
(Pulse Width v1.0 msec, T
DRM
C
= −40° to 110°C)
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
Device
(T
J
= 25°C unless otherwise noted)
GK
C
C
C
C
C
= 1 kW,
= 80°C)
= 80°C)
= 80°C)
= 80°C)
= 80°C)
J
Characteristic
= +110°C)
Characteristic
(T
C
= 25°C unless otherwise noted.)
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C106B
C106D, C106D1*
C106M, C106M1*
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
TO−225AA
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
2
Symbol
R
R
T
qJC
qJA
L
Symbol
I
V
P
V
T(RMS)
I
I
P
T(AV)
I
T
DRM,
TSM
G(AV)
RRM
I
GM
T
GM
stg
2
−
J
t
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
Max
260
3.0
Shipping
75
−40 to +110
−40 to +150
Max
2.55
1.65
200
400
600
4.0
0.5
0.1
0.2
6.0
20
†
°C/W
°C/W
Unit
°C
in. lb.
Unit
A
°C
°C
W
W
V
A
A
A
A
2
s