XL0840 STMicroelectronics, XL0840 Datasheet

SCR 0.8A 400V TO-92-3

XL0840

Manufacturer Part Number
XL0840
Description
SCR 0.8A 400V TO-92-3
Manufacturer
STMicroelectronics
Datasheet

Specifications of XL0840

Scr Type
Sensitive Gate
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.95V
Current - On State (it (av)) (max)
500mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
5mA
Current - Off State (max)
1µA
Current - Non Rep. Surge 50, 60hz (itsm)
7A, 8A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current - On State (it (rms) (max)
800mA
Breakover Current Ibo Max
8 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
1 uA
Forward Voltage Drop
1.95 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
8 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7046

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MAIN FEATURES
DESCRIPTION
Thanks to its highly sensitive triggering levels, the
XL0840 device is suitable for all high volumes appli-
cations where the available gate current is limited,
such as Christmas lights control.
ABSOLUTE RATINGS (limiting values)
January 2002 - Ed: 1A
Symbol
I
P
T(RMS)
I
Symbol
dI/dt
I
T(AV)
T
I
G(AV)
TSM
I
I
GM
T
T(RMS)
V
2
stg
I
t
j
DRM
GT
®
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I
Critical rate of rise of on-state current
I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
2
G
t Value for fusing
= 2 x I
Value
400
200
0.8
GT
, tr 100ns
Unit
µA
A
V
Parameter
SENSITIVE GATE 0.8A SCRs
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20µs
G
K
A
Tj = 125°C
Tj = 125°C
Tj = 125°C
TI = 55°C
Tj = 25°C
Tj = 25°C
TI = 55°C
K
G A
TO-92
- 40 to + 150
- 40 to + 125
Value
0.24
0.8
0.5
0.1
XL0840
30
8
7
1
Unit
A/ s
A
°C
W
A
A
A
A
2
s
1/5

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XL0840 Summary of contents

Page 1

... DRM I 200 GT DESCRIPTION Thanks to its highly sensitive triggering levels, the XL0840 device is suitable for all high volumes appli- cations where the available gate current is limited, such as Christmas lights control. ABSOLUTE RATINGS (limiting values) Symbol I RMS on-state current (180° conduction angle) ...

Page 2

... Test Conditions 125° 125° 25° 125° 125° 25° 125°C Parameter Voltage Sensitivity 400V Weight 0.2 g XL0840 MAX. 200 MAX. 0.8 MIN. 0.1 MIN. 8 MAX. 5 MAX. 6 MIN. 75 MAX. 1.95 MAX. 1.0 MAX. 600 MAX. 1 100 Value ...

Page 3

... K=[Zth(j-a)/Rth(j-a)] 1.E+00 1.E-01 1.E-02 100 125 1.E-02 Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). IH [Rgk [Rgk= 0.01 XL0840 Tlead(° 100 tp(s) 1.E-01 1.E+00 1.E+01 1.E+02 Rgk(k ) 0.10 1.00 125 1.E+03 Tj=25°C 10.00 3/5 ...

Page 4

... XL0840 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). dV/dt [Rgk] / dV/dt [Rgk= Rgk 0.10 1.00 Fig. 8: Surge peak on-state current versus number of cycles. ITSM( Non repetitive 6 Tj initial=25° Repetitive Tlead=50° Number of cycles Fig. 10: On-state characteristics (maximum val- ues) ...

Page 5

... Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. REF. Min 4. 12. STMicroelectronics GROUP OF COMPANIES http://www.st.com DIMENSIONS Millimeters Inches Typ. Max. Min. Typ. Max. 1.35 0.053 4.70 2.54 0.100 0.173 0.500 3.70 0.50 XL0840 0.185 0.146 0.019 5/5 ...

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