X0202MA 2BL2 STMicroelectronics, X0202MA 2BL2 Datasheet - Page 4

• Manufacturer Part Number: X0202MA 2BL2
• Description: SCR 1.25A 600V TO-92
• Manufacturer: STMicroelectronics

Specifications of X0202MA 2BL2

• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.45V
• Current - On State (it (av)) (max): 800mA
• Current - On State (it (rms)) (max): 1.25A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 5µA
• Current - Non Rep. Surge 50, 60hz (itsm): 22.5A, 25A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Current - On State (it (rms) (max): 1.25A
• Breakover Current Ibo Max: 25 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Forward Voltage Drop: 1.45 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 8 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6810-2; X0202MA 2BL2

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
10.0
25
20
15
10
1.0
0.1
5
0
1
I
0.0
-40
TSM
dV/dt[R
I
GT H L
(A)
,I ,I [T ] /
0.2
-20
GK
T
Relative variation of triggering,
holding and latching current versus
junction temperature
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
Surge peak on-state current
versus number of cycles
Repetitive
amb
0.4
j
] / dV/dt[
=25°C
0
I
GT H L
0.6
,I ,I [T =25°C]
10
20
R
GK
Non repetitive
T initial=25°C
0.8
j
T (°C)
j
=1k ]
R
40
j
GK
1.0
(k )
60
1.2
I
GT
Typical values
100
80
1.4
R
GK
I
H
& I
= 1k
100
Number of cycles
L
1.6
t =10ms
p
V = 0.67 x V
D
One cycle
T
j
120
= 125°C
1.8
Doc ID 7480 Rev 4
DRM
1000
140
2.0
Figure 6.
Figure 8.
Figure 10. Non repetitive surge peak on state
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
18
16
14
12
10
300
100
8
6
4
2
0
1.E-02
10
1
0
dV/dt[C
I [R
0.01
H
I
TSM
V = 0.67 x V
D
dI/dt limitation
GK
R
T
2
j
GK
= 125°C
(A), I t (A s)
] / I [
= 1k
GK
DRM
H
Relative variation of holding
current versus gate-cathode
resistance (typical values)
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
] / dV/dt[
4
current for a sinusoidal pulse and
corresponding value of I
2
R
GK
2
6
1.E-01
=1k ]
0.10
R
GK
8
=1k ]
R
C
10
t (ms)
GK
GK
p
(k )
(nF)
12
1.E+00
14
1.00
16
I
TSM
2
18
T
T initial = 25°C
j
I t
2
Tj=25
20
1.E+01
10.00
22
X02