BT148W-600R,115 NXP Semiconductors, BT148W-600R,115 Datasheet - Page 3

• Manufacturer Part Number: BT148W-600R,115
• Description: THYRISTOR 1A 600V SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BT148W-600R,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.5V
• Current - On State (it (av)) (max): 600mA
• Current - On State (it (rms)) (max): 1A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A, 11A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 1A
• Breakover Current Ibo Max: 11 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.5 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3671-2; 934001000115; BT148W-600R T/R

Philips Semiconductors
October 1997
Thyristors
logic level
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
0.8
0.6
0.4
0.2
1.2
0.8
0.6
0.4
0.2
Fig.3. Maximum permissible rms current I
on-state current I
1
0
1
0
1000
-50
0
100
IT(RMS) / A
Ptot / W
10
conduction
angle
degrees
1
10us
average on-state current, I
30
60
90
120
180
ITSM / A
versus solder point temperature T
I
T
Tj initial = 25 C max
0.1
sinusoidal currents, t
a = form factor = I
form
factor
T
4
2.8
2.2
1.9
1.57
a
0
I TSM
0.2
time
100us
4
TSM
0.3
BT148W
, versus pulse width t
IF(AV) / A
2.8
BT134W
Tsp / C
BT148W
T / s
50
0.4
T(RMS)
2.2
p
1ms
T(AV)
0.5
/ I
10ms.
1.9
T(AV)
100
, where
Tsp(max) / C
.
112 C
0.6
a = 1.57
tot
sp
, versus
.
T(RMS)
p
10ms
, for
0.7
110
113
116
119
122
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
12
10
1.6
1.4
1.2
0.8
0.6
0.4
1.5
0.5
8
6
4
2
0
1
2
1
0
0.01
(T
1
-50
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
10
Number of cycles at 50Hz
TSM
0.1
, versus number of cycles, for
surge duration / s
BT148W
BT134W
BT151
Tj / C
50
I
Tj initial = 25 C max
sp
T
BT148W series
100
Product specification
1
T
112˚C.
100
I TSM
time
Rev 1.300
1000
150
10
j
.