BFS 466L6 E6327 Infineon Technologies, BFS 466L6 E6327 Datasheet - Page 3
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BFS 466L6 E6327
Manufacturer Part Number
BFS 466L6 E6327
Description
TRANSISTOR RF TWIN NPN TSLP-6
Manufacturer
Infineon Technologies
Datasheet
1.BFS_466L6_E6327.pdf
(8 pages)
Specifications of BFS 466L6 E6327
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
5V, 9V
Frequency - Transition
22GHz, 14GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain
12dB ~ 17dB
Power - Max
200mW, 210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 3V / 90 @ 15mA, 3V
Current - Collector (ic) (max)
50mA, 35mA
Mounting Type
Surface Mount
Package / Case
TSLP-6-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFS466L6E6327XT
SP000014240
SP000014240
Maximum Ratings
Parameter
Base current
TR1
TR2
Total power dissipation
TR1, T
TR2, T
Junction temperature
TR1
TR2
Ambient temperature
TR1
TR2
Storage temperature
TR1
TR2
Thermal Resistance
Parameter
Junction - soldering point
TR1
TR2
1
2
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R thJA please refer to Application Note Thermal Resistance
S
S
104°C
102°C
1)
2)
3
Symbol
I
P
T
T
T
Symbol
R
B
tot
j
A
stg
thJS
-65 ... 150
-65 ... 150
-65 ... 150
-65 ... 150
Value
Value
200
210
150
150
230
230
5
4
BFS466L6
2007-04-26
Unit
mA
mW
°C
Unit
K/W