BFR 182 B6663 Infineon Technologies, BFR 182 B6663 Datasheet - Page 4
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BFR 182 B6663
Manufacturer Part Number
BFR 182 B6663
Description
TRANSISTOR RF NPN 12V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BFR_182_E6327.pdf
(7 pages)
Specifications of BFR 182 B6663
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain
12dB ~ 18dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 10mA, 8V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR182B6663XT
SP000056362
SP000056362
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
B
C
6
4.8499
21.742
0.91624
2.2595
0.5641
2.8263
8.8619
22.72
6.5523
1.0132
1.7541
0
3
L
2
B’
C
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
2
Transistor
Chip
C
E
4
E’
C
L
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
1
1
C
3
C’
84.113
0.14414
10.004
0.039478
3.4217
2.1858
1.0378
0.43147
0
0.31068
0
0
0.64175
L
3
4
EHA07524
C
-
A
-
A
-
V
-
deg
-
fF
-
5
C
L
L
L
L
L
L
C
C
C
Valid up to 6GHz
BI
BO
EI
EO
CI
CO
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
BE
CB
CE
=
=
=
=
=
=
=
=
=
0.56639
8.4254
0.54818
5.9438
0.071955
1.8159
0.40796
0.34608
490.25
0.19281
0.75
1.11
300
0.85
0.51
0.69
0.61
0
0.49
73
84
165
2007-03-30
BFR182
-
fA
-
fA
mA
-
V
fF
-
V
eV
K
nH
nH
nH
nH
nH
nH
fF
fF
fF