BFG 193 E6433 Infineon Technologies, BFG 193 E6433 Datasheet - Page 5

• Manufacturer Part Number: BFG 193 E6433
• Description: TRANSISTOR RF NPN 12V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BFG 193 E6433

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 8 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 600 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BFG193E6433T; BFG193E6433XT; SP000010994

Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Pin 1
0.7
A
0.25
±0.1
Pin 1
Package SOT223
M
1
A
1.2
6.5
8
3
1.1
4.6
±0.1
±0.2
2
6.8
3.5
2.3
5
4
3
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Manufacturer
0.3 MAX.
0.1 MAX.
0.25
1.75
M
B
1.6
±0.1
B
2007-04-20
BFG193