MMBT918LT1 ON Semiconductor, MMBT918LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBT918LT1
• Description: TRANS SS VHF NPN 15V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT918LT1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 600MHz
• Noise Figure (db Typ @ F): 6dB @ 60MHz
• Gain: 11dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBT918LT1OSCT

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
Power Output
Common−Emitter Amplifier Power Gain
(I
(I
(I
(V
(I
(I
(I
(I
(V
(V
(V
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
CB
CB
CB
EB
= 10 mAdc, I
= 3.0 mAdc, I
= 1.0 mAdc, I
= 3.0 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 4.0 mAdc, V
= 1.0 mAdc, V
= 8.0 mAdc, V
= 6.0 mAdc, V
= 0.5 Vdc, I
= 15 Vdc, I
= 0 Vdc, I
= 10 Vdc, I
E
C
E
B
B
E
E
B
C
= 0, f = 1.0 MHz)
= 0)
CE
CE
CE
CB
CB
= 0)
= 1.0 mAdc)
= 1.0 mAdc)
= 0)
= 0, f = 1.0 MHz)
= 0)
= 0, f = 1.0 MHz)
= 1.0 Vdc)
= 10 Vdc, f = 100 MHz)
= 6.0 Vdc, R
= 15 Vdc, f = 500 MHz)
= 12 Vdc, f = 200 MHz)
EXTERNAL
Characteristic
NF TEST CONDITIONS
S
0.018 mF
= 50 W, f = 60 MHz) (Figure 1)
I
V
R
f = 60 MHz
100 k
C
0.018 mF
CE
S
Figure 1. NF, G
= 1.0 mA
(T
= 50 W
= 6.0 VOLTS
A
= 25°C unless otherwise noted)
V
BB
3
http://onsemi.com
pe
Measurement Circuit 20−200
2
C
G
pe
I
V
f = 200 MHz
C
CE
TEST CONDITIONS
= 6.0 mA
G
= 12 VOLTS
V
CC
0.018 mF
1000 pF BYPASS
0.018 mF
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
C
P
G
h
CBO
NF
f
obo
FE
ibo
out
T
pe
50 W
Min
600
3.0
15
30
20
30
11
−
−
−
−
−
−
−
VM
RF
Max
0.4
1.0
3.0
1.7
2.0
6.0
50
−
−
−
−
−
−
−
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
mW
dB
dB
pF
pF
−