MMBT918LT1 ON Semiconductor, MMBT918LT1 Datasheet

TRANS SS VHF NPN 15V SOT23

MMBT918LT1

Manufacturer Part Number
MMBT918LT1
Description
TRANS SS VHF NPN 15V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT918LT1

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
600MHz
Noise Figure (db Typ @ F)
6dB @ 60MHz
Gain
11dB
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 3mA, 1V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMBT918LT1OSCT

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MMBT918LT1G
VHF/UHF Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
225
556
300
417
3.0
1.8
2.4
15
30
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT918LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
M3B = Device Code
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
SOT−23 (TO−236)
1
1
(Pb−Free)
= Date Code*
= Pb−Free Package
Package
SOT−23
CASE 318
COLLECTOR
STYLE 6
M3B M G
EMITTER
2
G
Publication Order Number:
3
2
3
3000 / Tape & Reel
MMBT918LT1/D
Shipping

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MMBT918LT1 Summary of contents

Page 1

... M3B = Device Code M = Date Code Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3000 / Tape & Reel (Pb−Free) Publication Order Number: MMBT918LT1/D † ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 3.0 mAdc Collector −Base Breakdown Voltage (I = 1.0 mAdc Emitter −Base Breakdown Voltage ( mAdc, I ...

Page 3

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT918LT1/D ...

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