BLS2731-110,114 NXP Semiconductors, BLS2731-110,114 Datasheet - Page 4

• Manufacturer Part Number: BLS2731-110,114
• Description: TRANSISTOR RF POWER SOT423A
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-110,114

• Package / Case: SOT-423A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 7dB
• Power - Max: 500W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 3A, 5V
• Current - Collector (ic) (max): 12A
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 500000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045780114; BLS2731-110 TRAY; BLS2731-110 TRAY

Philips Semiconductors
2001 Dec 05
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
Fig.2
V
Fig.4
CE
CB
(dB)
( )
G p
Z i
= 40 V; class-C; t
= 40 V; class-C; P
10
12
8
6
4
2
0
8
4
0
2.7
2.6
Power gain and efficiency as functions of
frequency; typical values.
Input impedance as function of frequency
(series components); typical values.
2.8
p
L
= 100 s;
2.8
= 110 W.
2.9
= 10%.
3
3
f (GHz)
G p
f (GHz)
C
x i
r i
MGM538
MBK284
3.1
3.2
50
40
30
20
10
0
(%)
C
4
handbook, halfpage
handbook, halfpage
V
Fig.3
V
Fig.5
(W)
P L
CE
CB
140
120
100
( )
Z L
= 40 V; class-C; t
= 40 V; class-C; P
80
60
40
20
0
8
4
0
4
8
2.6
10
Load power as a function of drive power;
typical values.
Load impedance as function of frequency
(series components); typical values.
12
p
L
= 100 s;
2.8
= 110 W.
14
2.9 GHz
= 10%.
16
BLS2731-110
3
Product specification
f (GHz)
18
2.7
P D (W)
MGM539
R L
X L
MBK285
3.1
3.2
20