MAX2601ESA+T Maxim Integrated Products, MAX2601ESA+T Datasheet - Page 4

• Manufacturer Part Number: MAX2601ESA+T
• Description: TRANS RF NPN 900MHZ 15V 8SOIC
• Manufacturer: Maxim Integrated Products

Specifications of MAX2601ESA+T

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 1GHz
• Noise Figure (db Typ @ F): 3.3dB @ 836MHz
• Gain: 11.6dB
• Power - Max: 6.4W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 250mA, 3V
• Current - Collector (ic) (max): 1.2A
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.6V, 1W RF Power Transistors
for 900MHz Applications
The MAX2601/MAX2602 are high-performance silicon
bipolar transistors in power-enhanced, 8-pin SO pack-
ages. The base and collector connections use two pins
each to reduce series inductance. The emitter connects
to three (MAX2602) or four (MAX2601) pins in addition
to a back-side heat slug, which solders directly to the
PC board ground to reduce emitter inductance and
improve thermal dissipation. The transistors are intend-
ed to be used in the common-emitter configuration for
maximum
efficiency.
The MAX2602 includes a high-performance silicon
bipolar RF power transistor and a thermally matched
biasing diode that matches the power transistor’s ther-
mal and process characteristics. This diode is used to
create a bias network that accurately controls the
power transistor’s collector current as the temperature
changes (Figure 2).
The biasing diode is a scaled version of the power tran-
sistor’s base-emitter junction, in such a way that the
current through the biasing diode is 1/15 the quiescent
collector current of the RF power transistor. Supplying
the biasing diode with a constant current source and
connecting the diode’s anode to the RF power transis-
tor’s base ensures that the RF power transistor’s quies-
cent collector current remains constant through
Figure 1. Test Circuit
4
_______________Detailed Description
_______________________________________________________________________________________
power
T1, T2 =
RF
V
BB
IN
L1 =
0.1μF
2pF
COILCRAFT A05T INDUCTOR, 18.5nH
1", 50Ω TRANSMISSION LINE ON FR-4
gain
1000pF
MAX2601/MAX2602
Current Mirror Bias
and
T1
(MAX2602 only)
power-added
1000pF
5Ω
12pF
100nH
4
5
24Ω
temperature variations. Simply tying the biasing diode
to the supply through a resistor is adequate in most sit-
uations. If large supply variations are anticipated, con-
nect the biasing diode to a reference voltage through a
resistor, or use a stable current source. Connect the
biasing diode to the base of the RF power transistor
through a large RF impedance, such as an RF choke
(inductor), and decouple to ground through a surface-
mount chip capacitor larger than 1000pF.
Figure 2. Bias Diode Application
2, 6, 7
BACKSIDE
SLUG
Q1
1
L1
8
V
CC
R
BIAS
1000pF
10pF
1000pF
C
BIAS
RF
RF
IN
C
0.1μF
T2
C
IN
V
2pF
CC
RF
V
Q2
C
CC
C
OUT
RF
OUT