BFP 620F E7764 Infineon Technologies, BFP 620F E7764 Datasheet - Page 2

• Manufacturer Part Number: BFP 620F E7764
• Description: TRANSISTOR RF NPN 2.3V TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 620F E7764

• Package / Case: TSFP-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21dB
• Power - Max: 185mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 110 @ 50mA @ 1.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 65000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 2.3 V
• Emitter- Base Voltage Vebo: 1.2 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 185 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP620FE7764XT; SP000012989

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 50 mA, V
= 0.5 V, I
= 7.5 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
thJA
= 1.5 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
110
2.3
-
-
-
Values
Value
typ.
180
2.8
290
-
-
-
max.
2007-04-20
100
270
10
3
-
BFP620F
Unit
V
µA
nA
µA
-
Unit
K/W